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The development of fine geometry devices requires a greater depth of understanding of dopant incorporation mechanisms and the subsequent location of carriers. Spreading resistance is an accepted method for determining carrier concentration profiles. The deconvolution of these profiles from the raw spreading resistance data is a crucial step which uses so called sampling volume correction factors. These are complex and difficult to evaluate but a number of algorithms are available which attempt the necessary integrations and iterations. Five of these algorithms are reviewed and their accuracy and performance are evaluated on real (as opposed to model) data. The need for new methods of data smoothing is highlighted and it is concluded that the so called Berkowitz-Lux algorithm is currently the most successful available.
Profiling, spreading resistance, sampling volume correction factors, correction factors, carrier concentration profiles
Department Head, Silicon Materials and Characterisation, GEC Research Limited, Hirst Research Centre, Wembley, Middlesex