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    Influence of X-Ray Exposure Conditions on Pattern Quality

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    We have examined the relationship between x-ray resist sensitivity, spectral characteristics of the x-ray sources, and resist absorption coefficient with respect to our ability to control feature size in x-ray lithography. We have derived an expression relating these properties to the edge-definition quality by estimating the mean distance between the adjacent photon absorption events. It is shown that to ensure feature-size control to 0.05µm necessary to achieve 0.5µm minimum feature size, x-ray resist sensitivity should be no greater than 8 mJ/cm2 if conventional x-ray sources are used for exposure. The effect of a controlled exposure ambient [1] on edge definition is also demonstrated and discussed.


    x-ray lithography, shot noise, x-ray resist, exposure ambient, x-ray source for lithography

    Author Information:

    Starov, V
    manager, Resist and Application, of the X-ray Lithography Program, Varian Associates, Inc., Palo Alto, CA

    Committee/Subcommittee: F01.11

    DOI: 10.1520/STP25757S