STP960
Quality Control and Optimization During Plasma Deposition of a-Si:H
Published: 0
| Format | Pages | Price | ||
 |
PDF (116K) | 9 | $25 |  ADD TO CART |
|
Complete Source PDF (9.4M) | 699 | $70 | ADD TO CART |
Source: STP25754S
Reprints and PermissionsCite this document
.RIS
For RefWorks, EndNote, ProCite, Reference Manager, Zoteo, and many others.
.DOCX
For Microsoft Word
It is shown that contactless time-resolved microwave conductivity (TRMC) measurements permit an in-process quality control during the plasma deposition of amorphous hydrogenated silicon (a-Si:H) films. The relation between the transient photoconductivity of the amorphous semiconductor and its quality is discussed. The influence of various parameters, such as the substrate temperature and chemical composition on the shape of the signals is explained in terms of charge carrier kinetics. An automated production process to yield quality films is presented to demonstrate the use of these measurements.
Keywords:
amorphous silicon, transient photoconductivity, quality control, automated production process, plasma deposition
Author Information:
Kunst, M
research scientistsProfessormember of the chairmen board of the Bereich Strahlenchemie, Hahn-Meitner-Institut fur Kernforschung Berlin, Berlin 39,
Werner, A
research scientistsProfessormember of the chairmen board of the Bereich Strahlenchemie, Hahn-Meitner-Institut fur Kernforschung Berlin, Berlin 39,
Beck, G
research scientistsProfessormember of the chairmen board of the Bereich Strahlenchemie, Hahn-Meitner-Institut fur Kernforschung Berlin, Berlin 39,
Kuppers, U
research scientistsProfessormember of the chairmen board of the Bereich Strahlenchemie, Hahn-Meitner-Institut fur Kernforschung Berlin, Berlin 39,
Tributsch, H
research scientistsProfessormember of the chairmen board of the Bereich Strahlenchemie, Hahn-Meitner-Institut fur Kernforschung Berlin, Berlin 39,
Committee/Subcommittee: F01.06
DOI: 10.1520/STP25754S