Published: 01 January 1987
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This paper reviews the most recent results obtained using a very low pressure, plasma enhanced chemical vapor deposition technique for low temperature (650–800°C) silicon epitaxy. Initial results on autodoping studies and on p-n junctions and MOS transistors fabricated in these films are briefly discussed.
silicon epitaxy, autodoping, channel mobility, buried layers
Associate Professor of Electrical Engineering, Massachusetts Institute of Technology, Cambridge, MA