Published: 01 January 1988
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We have employed two optical techniques which give complementary indications of the formation of monolayers of oxide on freshly evaporated aluminum and silicon thin films. Visible ellipsometry is utilized to observe the growth of the initial monolayer of oxide on these films. From these data, we deduce the pressure and coverage dependence as well as the growth rate for the initial monolayer arising from these surface reactions. In addition, extreme ultraviolet (XUV) reflectance vs angle of incidence measurements at 58.4 nm wavelength clearly indicate the growth of oxide on the surface of our freshly deposited aluminum and silicon films as well. We have utilized this reflectance data to deduce the optical constants of aluminum and silicon at 58.4 nm. We find that previous XUV measurements of these optical constants were hampered by the presence of oxides. We also determined that the XUV reflectivity performance of aluminum films freshly deposited in our UHV system does not degrade appreciably when stored for four weeks in a helium atmosphere of 2 × 10-9 Torr.
aluminum, ellipsometry, oxidation, reflectance, silicon, UHV films, XUV
Los Alamos National Laboratory, Los Alamos, NM