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    STP1028

    Thermal Conductivity of Dielectric Films and Correlation to Damage Threshold at 1064nm

    Published: 01 January 1988


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    Abstract

    An infrared line scanning technique has been used to measure thermal conductivities of TiO2, Ta2O5, ZrO2, HfO2, A12O3 and SiO2 layers. Damage thresholds are determined using a two stage Nd:Yag laser with pulse length of 14ns and spot size of 300μ. A correlation between thermal conductivity, absorption coefficient, melting point and damage threshold is established. To explain the relation, theoretical models based on absorption and inclusion breakdown are analysed.

    Keywords:

    Thermal conductivity, thin films, oxide materials, laser damage


    Author Information:

    Akhtar, SMJ
    DAAD Fellow, Pakistan Institute of Nuclear Science and TechnologyCSSP, Punjab University, IslamabadLahore,

    Ristau, D
    INSTITUT FÜR QUANTENOPTIK, Universität Hannover, Hannover,

    Ebert, J
    INSTITUT FÜR QUANTENOPTIK, Universität Hannover, Hannover,


    Committee/Subcommittee: E13.03

    DOI: 10.1520/STP18574S