You are being redirected because this document is part of your ASTM Compass® subscription.
    This document is part of your ASTM Compass® subscription.


    The Effect of Impurities on U.V. Damage in CaF2

    Published: 0

      Format Pages Price  
    PDF (120K) 8 $25   ADD TO CART
    Complete Source PDF (17M) 720 $88   ADD TO CART

    Cite this document

    X Add email address send
      .RIS For RefWorks, EndNote, ProCite, Reference Manager, Zoteo, and many others.   .DOCX For Microsoft Word


    The paper discusses the role of impurities in bulk laser breakdown. Crystals of CaF2 have been grown with different impurity content. The introduced impurities are mainly rare earths, these being the most common contaminent species found in CaF2. Crystals selectively doped with Ce as well as very pure, strain annealed specimens were also grown. The generation of defect centres as a function of incident 248 nm laser fluence was monitored by transient absorption measurements. Bulk damage measurements indicated that the Ce doped crystals had the lowest thresholds followed by the pure strain annealed crystals, despite a complete absence of excited state absorbing centres produced during laser irradiation. Those crystals which showed a significant production of transient defects and fluorescent levels had very high damage thresholds.


    colour centres, excimer damage, effect of impurities, surface and bulk effects, transient absorption, 248nm

    Author Information:

    Laidler, I
    Loughborough Unversity of Tehnology, Loughborough, Leics

    Emmony, DC
    Loughborough Unversity of Tehnology, Loughborough, Leics

    Committee/Subcommittee: F01.10

    DOI: 10.1520/STP18546S