You are being redirected because this document is part of your ASTM Compass® subscription.
    This document is part of your ASTM Compass® subscription.

    If you are an ASTM Compass Subscriber and this document is part of your subscription, you can access it for free at ASTM Compass

    Problems and Possibilities of Comparing Different Lifetime Measuring Instruments and Techniques

    Published: 01 January 1998

      Format Pages Price  
    PDF (292K) 11 $25   ADD TO CART
    Complete Source PDF (7.5M) 379 $87   ADD TO CART

    Cite this document

    X Add email address send
      .RIS For RefWorks, EndNote, ProCite, Reference Manager, Zoteo, and many others.   .DOCX For Microsoft Word


    The scope of the present paper is the understanding of the most important parameters influencing carrier lifetime measurement results. The role of surface conditions and carrier injection levels are discussed in details. Two techniques, μ-PCD and SPV, are compared for the case of some important recombination centers, such as Fe, Cr, Au and Co. Fe and Cr are investigated by both techniques in their single atomic form and also when pairing with dopant boron. It is shown that SPV results are in agreement with the expectations from μ-PCD data when the difference in injection level is taken into account. The capabilities of the two techniques are demonstrated in the case of Fe-B and Cr-B pair dissociation and association processes.


    carrier lifetime, SPV, μ-PCD, injection level, surface recombination, surface passivation

    Author Information:

    Pavelka, T
    Managing director, Semilab Rt., Budapest,

    Committee/Subcommittee: F01.10

    DOI: 10.1520/STP15706S