You are being redirected because this document is part of your ASTM Compass® subscription.
    This document is part of your ASTM Compass® subscription.

    If you are an ASTM Compass Subscriber and this document is part of your subscription, you can access it for free at ASTM Compass

    Application and Comparison of SPV and μPCD for Iron Measurement in Silicon Wafer Manufacturing

    Published: 01 January 1998

      Format Pages Price  
    PDF (124K) 7 $25   ADD TO CART
    Complete Source PDF (7.5M) 379 $87   ADD TO CART

    Cite this document

    X Add email address send
      .RIS For RefWorks, EndNote, ProCite, Reference Manager, Zoteo, and many others.   .DOCX For Microsoft Word


    Minority carrier lifetime tools μ-PCD and SPV diffusion length are used in process monitoring in silicon wafer manufacturing for metal contamination control. In p-type silicon, both lifetime tools had been correlated with DLTS so as to be able to measure [Fe] concentration. In comparison of these two methods, a good correlation was obtained in a large range with extrapolation to the upper 1e10/cm3 level using Czochralski (CZ) silicon samples. In general, SPV resulted in a higher [Fe] than μ-PCD methods. At lower 1e10/cm3 level, the boron and oxygen concentrations significantly limit the [Fe] detection capability of μ-PCD, but less significantly on that of SPV.


    minority carrier lifetime, diffusion length, μ-PCD, SPV, iron in silicon

    Author Information:

    Pan, Y
    Senior Engineer, SEH America, Inc., Vancouver, WA

    Committee/Subcommittee: F01.10

    DOI: 10.1520/STP15705S