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    STP1340

    Application and Comparison of SPV and μPCD for Iron Measurement in Silicon Wafer Manufacturing

    Published: 01 January 1998


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    Abstract

    Minority carrier lifetime tools μ-PCD and SPV diffusion length are used in process monitoring in silicon wafer manufacturing for metal contamination control. In p-type silicon, both lifetime tools had been correlated with DLTS so as to be able to measure [Fe] concentration. In comparison of these two methods, a good correlation was obtained in a large range with extrapolation to the upper 1e10/cm3 level using Czochralski (CZ) silicon samples. In general, SPV resulted in a higher [Fe] than μ-PCD methods. At lower 1e10/cm3 level, the boron and oxygen concentrations significantly limit the [Fe] detection capability of μ-PCD, but less significantly on that of SPV.

    Keywords:

    minority carrier lifetime, diffusion length, μ-PCD, SPV, iron in silicon


    Author Information:

    Pan, Y
    Senior Engineer, SEH America, Inc., Vancouver, WA


    Committee/Subcommittee: F01.10

    DOI: 10.1520/STP15705S