SYMPOSIA PAPER Published: 01 January 1998
STP15703S

Non-Contact Silicon Epilayer and Subsurface Characterization with UV/mm Wave Technique

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Carrier lifetimes and interface recombination velocities in p/p+ and n/n+ Si epitaxial wafers are determined from the photoconductivity decays (PCDs) measured using UV/mm-wave technique. Mo and Fe are found in p/p+ Si epitaxial wafers. Gate oxide integrity (GOI) is not dependent on roughness of Rrms (root-mean-square surface roughness) 0.097–0.247 nm but dependent on subsurface damage induced by chemical mechanical polishing (CMP). Photoconductivity amplitude (PCA) signal measured by the UV/mm-wave technique correlates closely the gate oxide integrity yield. CMP induced by subsurface damage is removed by SC1 cleaning and the procedure is monitored by the UV/mm-wave technique. Lifetimes in a denuded zone (DZ) and intrinsic gettering (IG) layer are determined from the PCA signal measured using the UV/mm-wave technique.

Author Information

Ogita, Y-I
Kanagawa Institute of Technology, Atsugi, Kanagawa, Japan
Tate, N
Isobe R & D Center, Shin-Etsu Handotai Co. Ltd., Annaka, Gunma, Japan
Masumura, H
Shirakawa R & D Center, Shin-Etsu Handotai Co. Ltd., Nishishirakawa, Fukushima, Japan
Miyazaki, M
Silicon Technology R & D Center, Sumitomo Sitix Corp., Kishima, Saga, Japan
Yakushiji, K
Silicon Research & Development Center, Showa Denko K. K., Chichibu, Saitama, Japan
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Details
Developed by Committee: F01
Pages: 168–182
DOI: 10.1520/STP15703S
ISBN-EB: 978-0-8031-5389-9
ISBN-13: 978-0-8031-2489-9