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Source: STP15700S
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We present an overview of the physics and practical issues related to surface photovoltage measurement of the minority carrier diffusion length and its application to monitoring recombination center defects in silicon. A tutorial description is given of the role of pertinent processes like injection, recombination and trapping. The evolution of the SPV method is presented followed by a description of most recent refinements addressing the measurement of long diffusion lengths in silicon wafers with emphasis on accuracy, measuring speed, tool-to-tool reproducibility and, practically the most important question of monitoring, iron concentration.
Keywords:
surface photovoltage, minority carrier diffusion length, iron contamination, recombination lifetime
Author Information:
Lagowski, J
Semiconductor Diagnostics, Inc., Tampa, FL
Edelman, P
Semiconductor Diagnostics, Inc., Tampa, FL
Faifer, V
Semiconductor Diagnostics, Inc., Tampa, FL
Committee/Subcommittee: F01.10
DOI: 10.1520/STP15700S