SYMPOSIA PAPER Published: 01 January 1998
STP15693S

Carrier Lifetime Measurements by Microwave Photoconductivity Decay Method

Source

The recombination lifetimes of silicon wafers were studied using microwave photo-conductivity decay(μ PCD) method with variable photo-injection function. For samples with surface inversion layers, the lifetimes increased as the injected carrier concentration decreased, and converged toward the value determined by the SiO2/Si interface trap density. It was found that the bulk recombination lifetimes could be measured in middle-high injection. Any clear dependence was not observed in the samples with surface accumulation layers. The recombination lifetimes of light-irradiated p-type silicon with iron contamination revealed strong dependence on injected carrier concentration due to breaking up iron-boron pairs. Molybdenum contamination of the epitaxial layers in p/p+ and p/p− wafers were also investigated using the differential μPCD technique.

Author Information

Hashizume, H
Genesis Technology Inc., Kobe, HYOGO, JAPAN
Sumie, S
Kobe Steel, Ltd., Kobe, HYOGO, JAPAN
Nakai, Y
Kobe Steel, Ltd., Kobe, HYOGO, JAPAN
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Details
Developed by Committee: F01
Pages: 47–58
DOI: 10.1520/STP15693S
ISBN-EB: 978-0-8031-5389-9
ISBN-13: 978-0-8031-2489-9