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    STP1398

    Neutron and Gamma Ray Dosimetry in Spent-Fuel Radiation Environments Using Silicon Carbide Semiconductor Radiation Detectors

    Published: 0


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    Abstract

    Silicon carbide semiconductor radiation detectors are resistant to radiation induced damage and can be operated at elevated and changing temperatures., Silicon carbide radiation detectors have been shown to have linear responses to both neutrons and gamma rays. Furthermore, these responses are separable on the basis of pulse height, making simultaneous monitoring of both neutrons and gamma rays possible. The neutron and gamma ray sensitivities of silicon carbide radiation detectors are well-matched to the radiation environments characteristic of spent nuclear fuel. Measurements have been carried out in mixed gamma/neutron fields in a hot cell and at a reactor facility under conditions chosen to approximate the radiation fields typically encountered in the vicinity of spent nuclear fuel assemblies. The results of these measurements and the application of silicon carbide radiation detectors to spent fuel dosimetry are discussed.

    Keywords:

    neutron, gamma, detector, silicon carbide, semiconductor, spent fuel


    Author Information:

    Dulloo, AR
    Senior engineer, advisory scientist and senior technician, Westinghouse Electric Company, Pittsburgh, PA

    Ruddy, FH
    Senior engineer, advisory scientist and senior technician, Westinghouse Electric Company, Pittsburgh, PA

    Seidel, JG
    Senior engineer, advisory scientist and senior technician, Westinghouse Electric Company, Pittsburgh, PA

    Flinchbaugh, T
    Staff member, Radiation Science and Engineering Center, The Pennsylvania State University, University Park, PA

    Davison, C
    Staff member, Radiation Science and Engineering Center, The Pennsylvania State University, University Park, PA

    Daubenspeck, T
    Staff member, Radiation Science and Engineering Center, The Pennsylvania State University, University Park, PA


    Committee/Subcommittee: E10.08

    DOI: 10.1520/STP13657S