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    Ultra-Thin Film Dielectric Reliability Characterization

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    The reliability of gate oxides is becoming a critical concern as oxide thickness is scaled below 4 nm in future technology. The breakdown detection algorithms in traditional reliability characterization techniques must be modified for sub-4 nm thick SiO2 films that exhibit excessive tunneling currents and soft breakdown. It becomes essential to fully understand the physical mechanism(s) responsible for gate oxide wear-out and breakdown if reliability projections are based on the results of highly accelerated wafer-level GOI tests. Issues relating to the reliability testing of ultra-thin oxides are discussed with examples.


    silicon oxide, reliability, accelerated stress tests, gate oxide integrity, dielectric breakdown

    Author Information:

    Suehle, JS
    Electronics Engineer, National Institute of Standards and Technology, Gaithersburg, MD

    Committee/Subcommittee: F01.06

    DOI: 10.1520/STP13481S