Author Information

M. S. Adler

Affiliation: General Electric Company

Division/Department: Power Semiconductor Branch, Corporate Research and Development

Address:
Schenectady, New York 12301
United States


Publications


Lifetime Depth Profile Measurement Method in Heavily Doped Semiconductors Using Electron Beams

STP35138S
M. S. Adler
Corporate Research and Development, General Electric Co.


StockCodeTitlePublished AsAffiliationPub Date by Most Viewed
STP35138S Lifetime Depth Profile Measurement Method in Heavily Doped Semiconductors Using Electron Beams M. S. Adler Corporate Research and Development, General Electric Co. 01 January 1980