Subcommittee F01.11 on Nuclear and Space Radiation Effects

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Showing results 1-13 of 13 matching ACTIVE standards under the jurisdiction of F01.11     F01 Home

F448-11 Test Method for Measuring Steady-State Primary Photocurrent

F615M-95(2013) Standard Practice for Determining Safe Current Pulse-Operating Regions for Metallization on Semiconductor Components (Metric)

F744M-16 Standard Test Method for Measuring Dose Rate Threshold for Upset of Digital Integrated Circuits (Metric)

F773M-16 Standard Practice for Measuring Dose Rate Response of Linear Integrated Circuits (Metric)

F980-16 Standard Guide for Measurement of Rapid Annealing of Neutron-Induced Displacement Damage in Silicon Semiconductor Devices

F996-11 Standard Test Method for Separating an Ionizing Radiation-Induced MOSFET Threshold Voltage Shift Into Components Due to Oxide Trapped Holes and Interface States Using the Subthreshold Current-Voltage Characteristics

F1190-11 Standard Guide for Neutron Irradiation of Unbiased Electronic Components

F1192-11 Standard Guide for the Measurement of Single Event Phenomena (SEP) Induced by Heavy Ion Irradiation of Semiconductor Devices

F1262M-14 Standard Guide for Transient Radiation Upset Threshold Testing of Digital Integrated Circuits (Metric)

F1263-11 Standard Guide for Analysis of Overtest Data in Radiation Testing of Electronic Parts

F1467-11 Standard Guide for Use of an X-Ray Tester (≈10 keV Photons) in Ionizing Radiation Effects Testing of Semiconductor Devices and Microcircuits

F1892-12 Standard Guide for Ionizing Radiation (Total Dose) Effects Testing of Semiconductor Devices

F1893-11 Guide for Measurement of Ionizing Dose-Rate Survivability and Burnout of Semiconductor Devices

0 matching Proposed New Standards under the jurisdiction of F01.11     F01 Home

Showing Results 1-10 of 10 matching WITHDRAWN standards under the jurisdiction of F01.11     F01 Home

F528-99(2005) Standard Test Method of Measurement of Common-Emitter D-C Current Gain of Junction Transistors (Withdrawn 2011)

F616-92 Standard Test Method for Measuring MOSFET Drain Leakage Current

F616M-96(2003) Standard Test Method for Measuring MOSFET Drain Leakage Current (Metric) (Withdrawn 2009)

F617-00 Standard Test Method for Measuring MOSFET Linear Threshold Voltage (Withdrawn 2006)

F676-97(2003) Standard Test Method for Measuring Unsaturated TTL Sink Current (Withdrawn 2009)

F769-00 Standard Test Method for Measuring Transistor and Diode Leakage Currents (Withdrawn 2006)

F773-92 Practice for Measuring Dose Rate Response of Linear Integrated Circuits

F1259M-96(2003) Standard Guide for Design of Flat, Straight-Line Test Structures for Detecting Metallization Open-Circuit or Resistance-Increase Failure Due to Electromigration [Metric] (Withdrawn 2009)

F1260M-96(2003) Standard Test Method for Estimating Electromigration Median Time-to-Failure and Sigma of Integrated Circuit Metallizations [Metric] (Withdrawn 2009)

F1261M-96(2003) Standard Test Method for Determining the Average Electrical Width of a Straight, Thin-Film Metal Line [Metric] (Withdrawn 2009)