Developed by Subcommittee: F01.11
WITHDRAWN, NO REPLACEMENT
This test method covers the measurement of metal-oxide semiconductor (MOSFET) drain leakage current.
This test method is being withdrawn because the committee is not aware of the need to maintain the standard. Reference to the standard will remain available, but at this time, the committee does not wish to actively maintain the standard.
Formerly under the jursidiction of Committee F01 on Electronics and the direct responsibility of Subcommittee F01.11 on Nuclear and Space Radiation Effects, this test method was withdrawn in December 2009 with no replacement.
1.1 This test method covers the measurement of MOSFET (Note 1) drain leakage current.
Note 1—MOS is an acronym for metal-oxide semiconductor; FET is an acronym for field-effect transistor.
1.2 This test method is applicable to all enhancement-mode and depletion-mode MOSFETs. This test method specifies positive voltage and current, conventions specifically applicable to n-channel MOSFETs. The substitution of negative voltage and negative current makes the method directly applicable to p-channel MOSFETs.
1.3 This d-c test method is applicable for the range of drain voltages greater than 0 V but less than the drain breakdown voltage.
1.4 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.
2. Referenced Documents (purchase separately) The documents listed below are referenced within the subject standard but are not provided as part of the standard.
E178 Practice for Dealing With Outlying Observations