ASTM F616-92

    Standard Test Method for Measuring MOSFET Drain Leakage Current

    Withdrawn Standard: ASTM F616-92 | Developed by Subcommittee: F01.11


    There is no PDF download available at this time, however you may purchase a copy of this document from the IHS Standards Store
    (Click here to view IHS phone and email contact details).

    1. Scope

    1.1 This test method covers the measurement of MOSFET (Note 1) drain leakage current.

    Note 1-MOS is an acronym for metal-oxide semiconductor; FET is an acronym for field-effect transistor.

    1.2 The test method is applicable to all enhancement-mode and depletion-mode MOSFETs. The test method specifies positive voltage and current, conventions specifically applicable to n-channel MOSFETs. The substitution of negative voltage and negative current makes the method directly applicable to p-channel MOSFETs.

    1.3 This d-c test method is applicable for the range of drain voltages greater than 0 V but less than the drain breakdown voltage.

    1.4 This standard does not purport to address all of the safety problems, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.

    Citation Format

    ASTM F616-92, Standard Test Method for Measuring MOSFET Drain Leakage Current, ASTM International, West Conshohocken, PA, 1992,

    Back to Top