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This specification covers high purity titanium sputtering targets for use as raw material in the fabrication of semiconductor electronic thin films. Material covered by this specification comprises Grades 4N, 4N5, and 5N titanium sputtering targets, the grades of which are based on the total metallic impurity content. The target shall be manufactured free of any contaminates such as dirt or oils and with average and maximum grain sizes in conformity with the requirements specified. The target shall be analyzed for trace metallic impurities, carbon, oxygen, sulfur, nitrogen, and hydrogen and shall conform to the grade requirements and the acceptable and minimum detection limits specified.
This abstract is a brief summary of the referenced standard. It is informational only and not an official part of the standard; the full text of the standard itself must be referred to for its use and application. ASTM does not give any warranty express or implied or make any representation that the contents of this abstract are accurate, complete or up to date.
1.1 This specification covers pure titanium sputtering targets used as a raw material in fabricating semiconductor electronic devices.
1.2 This standard sets purity grade levels, physical attributes, analytical methods, and packaging.
1.2.1 The grade designation is a measure of total metallic impurity content. The grade designation does not necessarily indicate suitability for a particular application because factors other than total metallic impurity may influence performance.
2. Referenced Documents (purchase separately) The documents listed below are referenced within the subject standard but are not provided as part of the standard.
E112 Test Methods for Determining Average Grain Size
ICS Number Code 31.120 (Electronic display devices)
UNSPSC Code 32131012(Sputtering targets)