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ASTM F1262M - 95(2008)


ASTM F1262M - 95(2008) Standard Guide for Transient Radiation Upset Threshold Testing of Digital Integrated Circuits (Metric)


Active Standard ASTM F1262M Developed by Subcommittee: F01.11 |Book of Standards Volume: 10.04

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ASTM F1262M

Significance and Use

Digital logic circuits are used in system applications where they are exposed to pulses of radiation. It is important to know the minimum radiation level at which transient failures can be induced, since this affects system operation.

1. Scope

1.1 This guide is to assist experimenters in measuring the transient radiation upset threshold of silicon digital integrated circuits exposed to pulses of ionizing radiation greater than 103 Gy (Si)/s.

1.2 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.


2. Referenced Documents (purchase separately) The documents listed below are referenced within the subject standard but are not provided as part of the standard.

ASTM Standards

E666 Practice for Calculating Absorbed Dose From Gamma or X Radiation

E668 Practice for Application of Thermoluminescence-Dosimetry (TLD) Systems for Determining Absorbed Dose in Radiation-Hardness Testing of Electronic Devices

F867M Guide or Ionizing Radiation Effects (Total Dose) Testing of Semiconductor Devices [Metric] (Withdrawn 1998)

Military Standards:

Method 1021 in MIL- Dose Rate Threshold for Upset of Digital Microcircuits.



Keywords

digital integrated circuits; digital IC's; functional errors; ionizing; pulsed radiation; radiation; transient radiation; upset threshold; Combinational logic; Destructive testing--semiconductors; Digital integrated circuits; Electrical conductors (semiconductors); Failure end point--electronic components/devices; 0Functional errors; Integrated circuits; Ionizing radiation; Irradiance/irradiation--semiconductors; 0Microelectronic devices; MSI integrated circuits; Output transient voltage; Pulsed radiation; Radiation 0exposure--electronic components/devices; Response factors; SSI integrated circuits; Threshold 0detectors; Topological analysis; Transient radiation upset threshold testing; Upset threshold; Voltage; 0Combinational logic; Destructive testing--semiconductors; Digital integrated circuits; Electrical 0conductors (semiconductors); Failure end point--electronic components/devices; Functional errors; 0Integrated circuits; Ionizing radiation; Irradiance/irradiation--semiconductors; Microelectronic devices; 0MSI integrated circuits; Output transient voltage; Pulsed radiation; Radiation exposure--electronic 0components/devices; Response factors; SSI integrated circuits; Threshold detectors; Topological 0analysis; Transient radiation upset threshold testing; Upset threshold; Voltage; ICS Number Code 031.200



ICS Code



DOI: 10.1520/F1262M-95R08

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