This test method is designed for determining the average electrical width of a narrow thin-film metallization line.
Formerly under the jurisdiction of Committee F01 on Electronics and Subcommittee F01.11 on Nuclear and Space Radiation Effects, this practice was withdrawn in May 2009 with no replacement because the committee is not aware of the need to maintain the standard. Reference to the standard will remain available, but at this time, the committee does not wish to actively maintain the standard.
1.1 This test method is designed for determining the average electrical width of a narrow thin-film metallization line.
1.2 This test method is intended for measuring thin metallization lines such as are used in microelectronic circuits where the width of the lines may range from micrometres to tenths of micrometres.
1.3 The test structure used in this test method may be measured while still part of a wafer, or part therefrom, or as part of a test chip bonded to a package and electrically accessible by means of package terminals.
1.4 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.
aluminum; electrical interconnect; electrical linewidth; linewidth; metallization; semiconductor; test structure; thin film
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