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This guide covers recommended design features for test structures used in accelerated stress tests, as described in Test Method F1260M, to characterize the failure distribution of interconnect metallizations that fail due to electromigration.
This guide is being withdrawn because the committee is not aware of the need to maintain the standard. Reference to the standard will remain available, but at this time, the committee does not wish to actively maintain the standard.
Formerly under the jursidiction of Committee F01 on Electronics and the direct responsibility of Subcommittee F01.11 on Nuclear and Space Radiation Effects, this test method was withdrawn in December 2009 with no replacement.
1.1 This guide covers recommended design features for test structures used in accelerated stress tests, as described in Test Method F 1260M, to characterize the failure distribution of interconnect metallizations that fail due to electromigration.
1.2 This guide is restricted to structures with a straight test line on a flat surface that are used to detect failures due to an open-circuit or a percent-increase in resistance of the test line.
1.3 This guide is not intended for testing metal lines whose widths are approximately equal to or less than the estimated mean size of the metal grains in the metallization line.
1.4 This guide is not intended for test structures used to detect random defects in a metallization line.
1.5 Metallizations tested and characterized are those that are used in microelectronic circuits and devices.
2. Referenced Documents (purchase separately) The documents listed below are referenced within the subject standard but are not provided as part of the standard.
F1260M Test Method for Estimating Electromigration Median Time-To-Failure and Sigma of Integrated Circuit Metallizations (Metric)
F1261M Test Method for Determining the Average Electrical Width of a Straight, Thin-Film Metal Line (Metric)