1. Scope
1.1 This guide covers recommended design features for test structures used in accelerated stress tests, as described in Test Method F1260, to characterize the failure distribution of interconnect metallizations that fail due to electromigration.
1.2 The guide is restricted to structures with a straight test line on a flat surface that are used to detect failures due to an open-circuit or a percent-increase in resistance of the test line.
1.3 This guide is not intended for test structures used to detect random defects in a metallization line.
1.4 Metallizations tested and characterized are those that are used in microelectronic circuits and devices.
Keywords
Accelerated aging/testing-semiconductors; Defects-semiconductors; Electrical conductors-semiconductors; Electromigration; Failure end point-electronic components/devices; Metallization; Microelectronic device processing; Resistance-failure; Silicon-semiconductor applications; Straight-line testing; Test structures; Time to failure; Voltage; design of flat straight-line test structures (for detecting; metallization open-circuit/resistance to increase failure due to; electromigration), guide;
Citing ASTM Standards
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