This specification covers refractory silicide sputtering targets for use in microelectronic applications. Targets shall be classified by the following major constituents: molybdenum silicide, tantalum silicide, titanium silicide, and tungsten silicide. Target composition shall be stated as the atomic ratio of silicon to metal and shall conform to the prescribed maximum impurity level for: alkalis (potassium, lithium, sodium), refractory metals (molybdenum, tantalum, titanium, and tungsten), iron, other metals (aluminum, boron, calcium, cobalt, chromium, copper, magnesium, manganese, and nickel), carbon, and oxygen. Low alpha grade targets shall contain the prescribed maximum impurity level of uranium and thorium Dimensional and physical properties such as relative, actual, and theoretical densities are specified. The actual target density shall be determined by Archimedes principle or other acceptable techniques and the theoretical density shall be calculated from the given formula. The following chemical analytical methods shall be used: atomic absorption, combustion or infrared spectrometry, inert gas fusion, and alpha-emission rate analysis, depending on the impurity to be analyzed. There shall be no radial cracks, other cracks, or chips on the sputtering surface.
This abstract is a brief summary of the referenced standard. It is informational only and not an official part of the standard; the full text of the standard itself must be referred to for its use and application. ASTM does not give any warranty express or implied or make any representation that the contents of this abstract are accurate, complete or up to date.
1.1 This specification covers sputtering targets fabricated from metallic silicides (molybdenum silicide, tantalum silicide, titanium silicide, and tungsten silicide). These targets are referred to as refractory silicide targets, and are intended for use in microelectronic applications.
1.2 The values stated in SI units are to be regarded as standard. No other units of measurement are included in this standard.
density; microelectronics; molybdenum disilicide; refractory silicides; sputtering; sputtering targets; tantalum disilicide; titanium disilicide; tungsten disilicide; Electrical conductors (semiconductors)--specifications; Electronic materials/applications--specifications; Metallic silicide; Molybdenum (electronic applications)--specifications; Polycaprolactone (PCL); Refractory silicide targets; Silicides; Tantalum (Ta)/tantalum alloys--specifications; Targets; Titanium silicide; Tungsten silicide (WSix) ;
ICS Number Code 31.100 (Electronic tubes)
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