Significance and Use
Residual strain measurements are an aid in the design and fabrication of MEMS devices. The value for residual strain is used in Young’modulus calculations.
1.1 This test method covers a procedure for measuring the compressive residual strain in thin films. It applies only to films, such as found in microelectromechanical systems (MEMS) materials, which can be imaged using an interferometer. Measurements from fixed-fixed beams that are touching the underlying layer are not accepted.
1.2 This test method uses a non-contact optical interferometer with the capability of obtaining topographical 3-D data sets. It is performed in the laboratory.
1.3 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.
2. Referenced Documents (purchase separately) The documents listed below are referenced within the subject standard but are not provided as part of the standard.
E2244 Test Method for In-Plane Length Measurements of Thin, Reflecting Films Using an Optical Interferometer
E2246 Test Method for Strain Gradient Measurements of Thin, Reflecting Films Using an Optical Interferometer
E2444 Terminology Relating to Measurements Taken on Thin, Reflecting Films
E2530 Practice for Calibrating the Z-Magnification of an Atomic Force Microscope at Subnanometer Displacement Levels Using Si(111) Monatomic Steps
MS2 Test Method for Step Height Measurements of Thin Films
cantilevers; combined standard uncertainty; fixed-fixed beams; interferometry; length measurements; microelectromechanical systems; MEMS; polysilicon; residual strain; stiction; strain gradient; test structure;
ICS Number Code 37.040.20 (Photographic paper, film and plates. Cartridges)
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Citing ASTM Standards
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