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Significance and Use
5.1 In-plane length measurements can be used in calculations of parameters, such as residual strain and Young's modulus.
5.2 In-plane deflection measurements are required for specific test structures. Parameters, including residual strain, are calculated given the in-plane deflection measurements.
1.1 This test method covers a procedure for measuring in-plane lengths (including deflections) of patterned thin films. It applies only to films, such as found in microelectromechanical systems (MEMS) materials, which can be imaged using an optical interferometer, also called an interferometric microscope.
1.2 There are other ways to determine in-plane lengths. Using the design dimensions typically provides more precise in-plane length values than using measurements taken with an optical interferometric microscope. (Interferometric measurements are typically more precise than measurements taken with an optical microscope.) This test method is intended for use when interferometric measurements are preferred over using the design dimensions (for example, when measuring in-plane deflections and when measuring lengths in an unproven fabrication process).
1.3 This test method uses a non-contact optical interferometric microscope with the capability of obtaining topographical 3-D data sets. It is performed in the laboratory.
1.4 The maximum in-plane length measured is determined by the maximum field of view of the interferometric microscope at the lowest magnification. The minimum deflection measured is determined by the interferometric microscope’s pixel-to-pixel spacing at the highest magnification.
1.5 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.
2. Referenced Documents (purchase separately) The documents listed below are referenced within the subject standard but are not provided as part of the standard.
E2245 Test Method for Residual Strain Measurements of Thin, Reflecting Films Using an Optical Interferometer
E2246 Test Method for Strain Gradient Measurements of Thin, Reflecting Films Using an Optical Interferometer
E2444 Terminology Relating to Measurements Taken on Thin, Reflecting Films
E2530 Practice for Calibrating the Z-Magnification of an Atomic Force Microscope at Subnanometer Displacement Levels Using Si(111) Monatomic Steps
SEMI StandardMS2 Test Method for Step Height Measurements of Thin Films
ICS Number Code 37.040.20 (Photographic paper, film and plates. Cartridges)
UNSPSC Code 32111700(Semiconductor devices)