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Semiconductor Fabrication: Technology and Metrology
Gupta DC

Pages: 467       Published: 1989

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Table of Contents

Introduction
Gupta DC

The Effect of a Rotational Magnetic Field on MCZ Crystal Growing
Yamashita K, Kobayashi S, Aoki T, Kawata Y, Shiraiwa T

Silicon Slice Fracture Analysis
Dyer LD

Characterization of High Growth Rate Epitaxial Silicon from a New Single Wafer Reactor
Robinson MD, Lawrence LH

Softening of Si and GaAs During Thermal Process
Suga H, Ichizawa M, Endo K, Tomizawa K

Nucleation and Growth Kinetics of Bulk Microdefects in Heavily Doped Epitaxial Silicon Wafers
Wijaranakula W, Matlock JH, Mollenkopf H

On the Application of Calibration Data to Spreading Resistance Analysis
Berkowitz HL

Epitaxial Silicon Quality Improvement by Automatic Surface Inspection
Ruprecht DJ, Hellwig LG, Rossi JA

Spreading Resistance Profiles in Gallium Arsenide
Mazur RG, Hillard RJ

High Dose Arsenic Implant for Bipolar Buried Layers
Ygartua CL, Swaroop R

Accurate Junction-Depth Measurements Using Chemical Staining
Subrahmanyan R, Massoud HZ, Fair RB

Use of Polysilicon Deposition in a Cold-Wall LPCVD Reactor to Determine Wafer Temperature Uniformity
Starov V, Lane L

Dry Etching Techniques for MMIC Fabrication on GaAs
Bhardwaj JK, Kiermasz A, Stephens MA, Harrington SJ, McQuarrie AD

Dry Etching of Ion Implanted Silicon: Electrical Effects
Heddleson JM, Horn MW, Fonash SJ

Reaction Mechanisms and Rate Limitations in Dry Etching of Silicon Dioxide with Anhydrous Hydrogen Fluoride
Clements LD, Busse JE, Mehta J

Plasma Etching of Aluminum Alloys in BCL/CL Plasmas
Chen C-H, DeOrnellas S, Burke B

NBS Submicron Particle Standards for Microcontamination Measurement
Lettieri TR

Particulate Cleanliness Testing of Filters and Equipment in Process Fluids
Goldsmith SH, Grundelman GP

Parameters Controlling Counting Efficiency for Optical Liquid-Borne Particle Counters
Lieberman A

A Correlation Study of Aluminum Film Wet Etch Uniformity with the Sputter Etch of Oxide Films
Dumesnil FM, Bruner M, Berman M

Crack Free and Highly Reliable Double Level Metallization Process Using Plasma Oxide and Silanol-Type Sog Layers
Iwamori T, Sakata Y, Kojima H, Yatsuda Y

VLSI Defect Detection, Classification, and Reduction from In-Process and Post-Process Sram Inspections
Parks HG, Logan CE, Fahrenz CA

Advanced VLSI Isolation Technologies
Kuo Y

Application of Total Reflection X-Ray Fluorescence Analysis for Metallic Trace Impurities on Silicon Wafer Surfaces
Eichinger P, Rath HJ, Schwenke H

Chemical Analysis of Metallic Impurity on the Surface of Silicon Wafers
Shiraiwa T, Fujino N, Sumita S, Tanizoe Y

Process - Induced Influence on the Minority Carrier Lifetime in Power Devices
Khanna VK, Thakur DK, Jasuja KL, Khokle WS

The Role of Oxygen Precipitates in the Gettering of Iron in Silicon
Sinha PK, Glaunsinger WS

The Calibration and Reproducibility of Oxygen Concentration in Silicon Measurements using Sims Characterization Technique
Goldstein M, Makovsky J

Defect, Dopant, and Device Modification using Si(Ge,B) Epitaxy
Rozgonyi GA, Kola RR, Bean KE, Lindberg K

Effect of Pre- and Post-Epitaxial Annealing on Oxygen Precipitation and Internal Gettering in N/N(100) Epitaxial Wafers
Wijaranakula W, Shimada S, Mollenkopf H, Matlock JH, Stuber M

Electrical Characterization of Electrically Active Surface Contaminants by Epitaxial Encapsulation
Derheimer A, Takamizawa S, Matlock JH, Mollenkopf H

Optimum Polysilicon Deposition on Wafer Backs for Gettering Purposes
Borionetti G, Domenici M, Ferrero G

Modification of Control Charts for Use in an Integrated Circuit Fabrication Environment
Friedman DJ

Perkin-Elmer 544 Overlay Evaluation Using Statistical Techniques
Keller GA, Waldo WG, Babasick RF

Revolutionizing Semiconductor Material Specifications
Lowry RK

Economic Impact of Standards on Productivity in the Semiconductor Industry
Tassey GC, Scace RI, French JC

Author Index


Subject Index


Committee: F01
Paper ID: STP990-EB
DOI: 10.1520/STP990-EB

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STP990-EB