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SEDL / STP / STP990-EB
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STP990
Semiconductor Fabrication: Technology and Metrology
Gupta DC
Pages: 467
Published: 1989
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STP 990 presents 35 papers on: Silicon Crystal Growth and Epitaxial Deposition Techniques; Fabrication Technology; Micro contamination; Metallization and Interconnects; Material Defects and Gettering; and Control Charts, Standards, and Specifications.
Table of Contents
Introduction
Gupta D.
The Effect of a Rotational Magnetic Field on MCZ Crystal Growing
Aoki T., Kawata Y., Kobayashi S., Shiraiwa T., Yamashita K.
Silicon Slice Fracture Analysis
Dyer L.
Characterization of High Growth Rate Epitaxial Silicon from a New Single Wafer Reactor
Lawrence L., Robinson M.
Softening of Si and GaAs During Thermal Process
Endo K., Ichizawa M., Suga H., Tomizawa K.
Nucleation and Growth Kinetics of Bulk Microdefects in Heavily Doped Epitaxial Silicon Wafers
Matlock J., Mollenkopf H., Wijaranakula W.
On the Application of Calibration Data to Spreading Resistance Analysis
Berkowitz H.
Epitaxial Silicon Quality Improvement by Automatic Surface Inspection
Hellwig L., Rossi J., Ruprecht D.
Spreading Resistance Profiles in Gallium Arsenide
Hillard R., Mazur R.
High Dose Arsenic Implant for Bipolar Buried Layers
Swaroop R., Ygartua C.
Accurate Junction-Depth Measurements Using Chemical Staining
Fair R., Massoud H., Subrahmanyan R.
Use of Polysilicon Deposition in a Cold-Wall LPCVD Reactor to Determine Wafer Temperature Uniformity
Lane L., Starov V.
Dry Etching Techniques for MMIC Fabrication on GaAs
Bhardwaj J., Harrington S., Kiermasz A., McQuarrie A., Stephens M.
Dry Etching of Ion Implanted Silicon: Electrical Effects
Fonash S., Heddleson J., Horn M.
Reaction Mechanisms and Rate Limitations in Dry Etching of Silicon Dioxide with Anhydrous Hydrogen Fluoride
Busse J., Clements L., Mehta J.
Plasma Etching of Aluminum Alloys in BCL3/CL2 Plasmas
Burke B., Chen C., DeOrnellas S.
NBS Submicron Particle Standards for Microcontamination Measurement
Lettieri T.
Particulate Cleanliness Testing of Filters and Equipment in Process Fluids
Goldsmith S., Grundelman G.
Parameters Controlling Counting Efficiency for Optical Liquid-Borne Particle Counters
Lieberman A.
A Correlation Study of Aluminum Film Wet Etch Uniformity with the Sputter Etch of Oxide Films
Berman M., Bruner M., Dumesnil F.
Crack Free and Highly Reliable Double Level Metallization Process Using Plasma Oxide and Silanol-Type Sog Layers
Iwamori T., Kojima H., Sakata Y., Yatsuda Y.
VLSI Defect Detection, Classification, and Reduction from In-Process and Post-Process Sram Inspections
Fahrenz C., Logan C., Parks H.
Advanced VLSI Isolation Technologies
Kuo Y.
Application of Total Reflection X-Ray Fluorescence Analysis for Metallic Trace Impurities on Silicon Wafer Surfaces
Eichinger P., Rath H., Schwenke H.
Chemical Analysis of Metallic Impurity on the Surface of Silicon Wafers
Fujino N., Shiraiwa T., Sumita S., Tanizoe Y.
Process - Induced Influence on the Minority — Carrier Lifetime in Power Devices
Jasuja K., Khanna V., Khokle W., Thakur D.
The Role of Oxygen Precipitates in the Gettering of Iron in Silicon
Glaunsinger W., Sinha P.
The Calibration and Reproducibility of Oxygen Concentration in Silicon Measurements using Sims Characterization Technique
Goldstein M., Makovsky J.
Defect, Dopant, and Device Modification using Si(Ge,B) Epitaxy
Bean K., Kola R., Lindberg K., Rozgonyi G.
Effect of Pre- and Post-Epitaxial Annealing on Oxygen Precipitation and Internal Gettering in N/N+(100) Epitaxial Wafers
Matlock J., Mollenkopf H., Shimada S., Stuber M., Wijaranakula W.
Electrical Characterization of Electrically Active Surface Contaminants by Epitaxial Encapsulation
Derheimer A., Matlock J., Mollenkopf H., Takamizawa S.
Optimum Polysilicon Deposition on Wafer Backs for Gettering Purposes
Borionetti G., Domenici M., Ferrero G.
Modification of Control Charts for Use in an Integrated Circuit Fabrication Environment
Friedman D.
Perkin-Elmer 544 Overlay Evaluation Using Statistical Techniques
Babasick R., Keller G., Waldo W.
Revolutionizing Semiconductor Material Specifications
Lowry R.
Economic Impact of Standards on Productivity in the Semiconductor Industry
French J., Scace R., Tassey G.
Appendix: Workshop and Panel Discussions
Author Index
Subject Index
Committee: F01
Paper ID: STP990-EB
DOI: 10.1520/STP990-EB
ISBN-EB: 978-0-8031-5107-9
 ASTM International is a member of CrossRef.
0-8031-1273-4
978-0-8031-1273-5
STP990-EB
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