STP960

    Emerging Semiconductor Technology

    Gupta DC
    Published: 1987


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    Fourth in a series, STP 960 addresses new problems in semiconductor processing for the mid ‘80s. A total of 50 papers cover; Epitaxial Technology; Dielectrics and Junction Formation Techniques; Material Defects, Oxygen and Carbon in Silicon; Yield Enhancement and Contamination Control Aspects; Dopant Profiling Techniques and In-Process Measurements; and Fab Equipment: Automation and Reliability.


    Table of Contents

    Introduction

    Silicon and Semiconductors: Partners in the Late 1980's

    ASTM and Semi Standards for the Semiconductor Industry

    Low Temperature and Low Pressure Silicon Epitaxy by Plasma-Enhanced CVD

    Thin Silicon Epitaxial Films Deposited at Low Temperatures

    Thin Epitaxial Silicon by CVD

    Effects of Gettering on Epi Quality for CMOS Technology

    Silicon Epitaxial Growth on N+ Substrate for CMOS Products

    Characterization of the in Situ HCl Etch for Epitaxial Silicon

    Doped Oxide Spin-On Source Diffusion

    Effect of a Shallow Xenon Implantation on a Profile Measured by Spreading Resistance

    Measurements of Cross-Contamination Levels Produced by Ion Implanters

    Some Aspects of Productivity of a Low Pressure CVD Reactor

    Deposition and Properties of Ultra-Thin High Dielectric Constant Insulators

    The Electrical Properties of MOS Transistors Fabricated with Direct Ion Beam Nitridation

    Rie Damage and Its Control in Silicon Processing

    The Bonding Structure and Compositional Analysis of Plasma Enhanced and Low Pressure Chemical Vapor Deposited Silicon Dielectric Films

    Monte Carlo Simulation of Plasma Etch Emission Endpoint

    Profile Control of Plasma Etched Polysilicon Using Implant Doping

    The Effects of Plasma Processing of Dielectric Layers on Gallium Arsenide Integrated Circuits

    Quality Control and Optimization During Plasma Deposition of a-Si:H

    Effects of Deep UV Radiation on Photoresist in Al Etch

    Influence of X-Ray Exposure Conditions on Pattern Quality

    Palladium Silicide Contact Process Development for VLSI

    Characterization of Silicon Surface Defects by the Laser Scanning Technique

    Damage Aspects of Ingot-to-Wafer Processing

    Hydrogen in silicon and generation of haze on silicon surface in aging

    Identifying Gettered Impurities in Silicon by LIMA Analysis

    Effect of Bulk Defects in Silicon on SiO2 Film Breakdown

    Free Carrier Absorption and Interstitial Oxygen Measurements

    High Reliability Infrared Measurements of Oxygen and Carbon in Silicon

    Nature of Process-Induced Si-SiO2 Defects and Their Interaction with Illumination

    A Strategy for Reducing Variability in a Production Semiconductor Fabrication Area Using the Generation of System Moments Method

    Computerized Yield Modeling

    Particle and Material Control Automation System for VLSI Manufacturing

    Semiconductor Yield Enhancement Through Particle Control

    Particulate Control in VLSI Gases

    Spreading Resistance Measurements — An Overview

    Some Aspects of Spreading Resistance Profile Analysis

    Spreading Resistance : A Comparison of Sampling Volume Correction Factors in High Resolution Quantitative Spreading Resistance

    Comparison of Impurity Profiles Generated by Spreading Resistance Probe and Secondary Ion Mass Spectrometry

    Monte Carlo Calculation of Primary Kinematic Knock-on in Sims

    A Comparative Study of Carrier Concentration Profiling Techniques in Silicon: Spreading Resistance and Electrochemical CV

    Analysis of Boron Profiles As Determined by Secondary Ion Mass Spectrometry, Spreading Resistance, and Process Modeling

    Mapping Silicon Wafers by Spreading Resistance

    Production Monitoring of 200MM Wafer Processing

    Applications of x-ray Fluorescence Analysis to the Thin Layer on Silicon Wafers

    Qualification of GaAs and AlGaAs by Optical and Surface Analysis Techniques

    Wafer Fab Automation, an Integral Part of the CAM Environment

    Computer Integrated Manufacturing: The Realities and Hidden Costs of Automation

    Industry Considerations in Determining Equipment Reliability

    Appendices

    Subject Index

    Author Index


    Committee: F01

    DOI: 10.1520/STP960-EB

    ISBN-EB: 978-0-8031-5021-8

    ISBN-13: 978-0-8031-0459-4

    ASTM International is a member of CrossRef.

    0-8031-0459-6
    978-0-8031-0459-4
    STP960-EB