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SEDL / STP / STP960-EB
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STP960
Emerging Semiconductor Technology
Gupta DC
Pages: 699
Published: 1987
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Fourth in a series, STP 960 addresses new problems in semiconductor processing for the mid ‘80s. A total of 50 papers cover; Epitaxial Technology; Dielectrics and Junction Formation Techniques; Material Defects, Oxygen and Carbon in Silicon; Yield Enhancement and Contamination Control Aspects; Dopant Profiling Techniques and In-Process Measurements; and Fab Equipment: Automation and Reliability.
Table of Contents
Introduction
Gupta D.
Silicon and Semiconductors: Partners in the Late 1980's
Springgate J.
ASTM and Semi Standards for the Semiconductor Industry
Scace R.
Low Temperature and Low Pressure Silicon Epitaxy by Plasma-Enhanced CVD
Reif R.
Thin Silicon Epitaxial Films Deposited at Low Temperatures
Chang H., Rosczak J.
Thin Epitaxial Silicon by CVD
Fisher S., Hammond M., Sandler N.
Effects of Gettering on Epi Quality for CMOS Technology
Borland J., Daniel Wong C., Hahn S.
Silicon Epitaxial Growth on N+ Substrate for CMOS Products
Swaroop R.
Characterization of the in Situ HCl Etch for Epitaxial Silicon
Medernach J., Wells V.
Doped Oxide Spin-On Source Diffusion
Ramamurthy V.
Effect of a Shallow Xenon Implantation on a Profile Measured by Spreading Resistance
Bruel M., Du Port de Pontcharra J., Lora-Tamayo E.
Measurements of Cross-Contamination Levels Produced by Ion Implanters
Kirby B., Larson L.
Some Aspects of Productivity of a Low Pressure CVD Reactor
Middleman S.
Deposition and Properties of Ultra-Thin High Dielectric Constant Insulators
Martin D., Roberts S., Ryan J.
The Electrical Properties of MOS Transistors Fabricated with Direct Ion Beam Nitridation
Lee H.
Rie Damage and Its Control in Silicon Processing
Fonash S., Rohatgi A.
The Bonding Structure and Compositional Analysis of Plasma Enhanced and Low Pressure Chemical Vapor Deposited Silicon Dielectric Films
Abernathey J., Fridmann S., Gibson M., Nguyen S.
Monte Carlo Simulation of Plasma Etch Emission Endpoint
Bawolek E.
Profile Control of Plasma Etched Polysilicon Using Implant Doping
Abraham T., Theriault R.
The Effects of Plasma Processing of Dielectric Layers on Gallium Arsenide Integrated Circuits
Cockrill J., Turner J., Vanner K.
Quality Control and Optimization During Plasma Deposition of a-Si:H
Beck G., Kunst M., Kuppers U., Tributsch H., Werner A.
Effects of Deep UV Radiation on Photoresist in Al Etch
Chin B., Lee S.
Influence of X-Ray Exposure Conditions on Pattern Quality
Starov V.
Palladium Silicide Contact Process Development for VLSI
Singh R.
Characterization of Silicon Surface Defects by the Laser Scanning Technique
Liaw H., Nguyen H., Rose J.
Damage Aspects of Ingot-to-Wafer Processing
Dyer L.
Hydrogen in silicon and generation of haze on silicon surface in aging
Inenaga S., Shiraiwa T.
Identifying Gettered Impurities in Silicon by LIMA Analysis
Arst M.
Effect of Bulk Defects in Silicon on SiO2 Film Breakdown
Murai K., Suga H.
Free Carrier Absorption and Interstitial Oxygen Measurements
Baghdadi A., Gladden W.
High Reliability Infrared Measurements of Oxygen and Carbon in Silicon
Arai T., Endo K., Inoue N., Mizuma K., Nozaki T.
Nature of Process-Induced Si-SiO2 Defects and Their Interaction with Illumination
Kar S., Tewari M.
A Strategy for Reducing Variability in a Production Semiconductor Fabrication Area Using the Generation of System Moments Method
Maass E.
Computerized Yield Modeling
Beck C.
Particle and Material Control Automation System for VLSI Manufacturing
Brain M.
Semiconductor Yield Enhancement Through Particle Control
Casper N., Soren B.
Particulate Control in VLSI Gases
Davidson J., Ruane T.
Spreading Resistance Measurements — An Overview
Ehrstein J.
Some Aspects of Spreading Resistance Profile Analysis
Albers J.
Spreading Resistance : A Comparison of Sampling Volume Correction Factors in High Resolution Quantitative Spreading Resistance
Pawlik M.
Comparison of Impurity Profiles Generated by Spreading Resistance Probe and Secondary Ion Mass Spectrometry
Alvarez T., Sweeney G.
Monte Carlo Calculation of Primary Kinematic Knock-on in Sims
Albers J.
A Comparative Study of Carrier Concentration Profiling Techniques in Silicon: Spreading Resistance and Electrochemical CV
Groves R., Kubiak R., Leong W., Parker E., Pawlik M.
Analysis of Boron Profiles As Determined by Secondary Ion Mass Spectrometry, Spreading Resistance, and Process Modeling
Banke G., Slusser G., Varahramyan K.
Mapping Silicon Wafers by Spreading Resistance
Mazur R.
Production Monitoring of 200MM Wafer Processing
Johnson W., Keenan W., Smith A.
Applications of x-ray Fluorescence Analysis to the Thin Layer on Silicon Wafers
Arai T., Ochiai T., Sano M., Shiraiwa T., Tada Y.
Qualification of GaAs and AlGaAs by Optical and Surface Analysis Techniques
Berak J., Black J., Peterson G.
Wafer Fab Automation, an Integral Part of the CAM Environment
Fiorletta C., Harper J., Lennard R.
Computer Integrated Manufacturing: The Realities and Hidden Costs of Automation
Ligeti M.
Industry Considerations in Determining Equipment Reliability
Greiner J.
Appendices
Subject Index
Author Index
Committee: F01
Paper ID: STP960-EB
DOI: 10.1520/STP960-EB
ISBN-EB: 978-0-8031-5021-8
 ASTM International is a member of CrossRef.
0-8031-0459-6
978-0-8031-0459-4
STP960-EB
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