STP960

    Emerging Semiconductor Technology

    Gupta DC
    Published: 1987


      Format Pages Price  
    PDF Version (9.4M) $70   ADD TO CART
    Print Version $70   ADD TO CART
    Print + PDF Bundle - Save 25% $105.00   ADD TO CART


    Fourth in a series, STP 960 addresses new problems in semiconductor processing for the mid ‘80s. A total of 50 papers cover; Epitaxial Technology; Dielectrics and Junction Formation Techniques; Material Defects, Oxygen and Carbon in Silicon; Yield Enhancement and Contamination Control Aspects; Dopant Profiling Techniques and In-Process Measurements; and Fab Equipment: Automation and Reliability.


    Table of Contents

    Introduction
    Gupta D.

    Silicon and Semiconductors: Partners in the Late 1980's
    Springgate J.

    ASTM and Semi Standards for the Semiconductor Industry
    Scace R.

    Low Temperature and Low Pressure Silicon Epitaxy by Plasma-Enhanced CVD
    Reif R.

    Thin Silicon Epitaxial Films Deposited at Low Temperatures
    Chang H., Rosczak J.

    Thin Epitaxial Silicon by CVD
    Fisher S., Hammond M., Sandler N.

    Effects of Gettering on Epi Quality for CMOS Technology
    Borland J., Daniel Wong C., Hahn S.

    Silicon Epitaxial Growth on N+ Substrate for CMOS Products
    Swaroop R.

    Characterization of the in Situ HCl Etch for Epitaxial Silicon
    Medernach J., Wells V.

    Doped Oxide Spin-On Source Diffusion
    Ramamurthy V.

    Effect of a Shallow Xenon Implantation on a Profile Measured by Spreading Resistance
    Bruel M., Du Port de Pontcharra J., Lora-Tamayo E.

    Measurements of Cross-Contamination Levels Produced by Ion Implanters
    Kirby B., Larson L.

    Some Aspects of Productivity of a Low Pressure CVD Reactor
    Middleman S.

    Deposition and Properties of Ultra-Thin High Dielectric Constant Insulators
    Martin D., Roberts S., Ryan J.

    The Electrical Properties of MOS Transistors Fabricated with Direct Ion Beam Nitridation
    Lee H.

    Rie Damage and Its Control in Silicon Processing
    Fonash S., Rohatgi A.

    The Bonding Structure and Compositional Analysis of Plasma Enhanced and Low Pressure Chemical Vapor Deposited Silicon Dielectric Films
    Abernathey J., Fridmann S., Gibson M., Nguyen S.

    Monte Carlo Simulation of Plasma Etch Emission Endpoint
    Bawolek E.

    Profile Control of Plasma Etched Polysilicon Using Implant Doping
    Abraham T., Theriault R.

    The Effects of Plasma Processing of Dielectric Layers on Gallium Arsenide Integrated Circuits
    Cockrill J., Turner J., Vanner K.

    Quality Control and Optimization During Plasma Deposition of a-Si:H
    Beck G., Kunst M., Kuppers U., Tributsch H., Werner A.

    Effects of Deep UV Radiation on Photoresist in Al Etch
    Chin B., Lee S.

    Influence of X-Ray Exposure Conditions on Pattern Quality
    Starov V.

    Palladium Silicide Contact Process Development for VLSI
    Singh R.

    Characterization of Silicon Surface Defects by the Laser Scanning Technique
    Liaw H., Nguyen H., Rose J.

    Damage Aspects of Ingot-to-Wafer Processing
    Dyer L.

    Hydrogen in silicon and generation of haze on silicon surface in aging
    Inenaga S., Shiraiwa T.

    Identifying Gettered Impurities in Silicon by LIMA Analysis
    Arst M.

    Effect of Bulk Defects in Silicon on SiO2 Film Breakdown
    Murai K., Suga H.

    Free Carrier Absorption and Interstitial Oxygen Measurements
    Baghdadi A., Gladden W.

    High Reliability Infrared Measurements of Oxygen and Carbon in Silicon
    Arai T., Endo K., Inoue N., Mizuma K., Nozaki T.

    Nature of Process-Induced Si-SiO2 Defects and Their Interaction with Illumination
    Kar S., Tewari M.

    A Strategy for Reducing Variability in a Production Semiconductor Fabrication Area Using the Generation of System Moments Method
    Maass E.

    Computerized Yield Modeling
    Beck C.

    Particle and Material Control Automation System for VLSI Manufacturing
    Brain M.

    Semiconductor Yield Enhancement Through Particle Control
    Casper N., Soren B.

    Particulate Control in VLSI Gases
    Davidson J., Ruane T.

    Spreading Resistance Measurements — An Overview
    Ehrstein J.

    Some Aspects of Spreading Resistance Profile Analysis
    Albers J.

    Spreading Resistance : A Comparison of Sampling Volume Correction Factors in High Resolution Quantitative Spreading Resistance
    Pawlik M.

    Comparison of Impurity Profiles Generated by Spreading Resistance Probe and Secondary Ion Mass Spectrometry
    Alvarez T., Sweeney G.

    Monte Carlo Calculation of Primary Kinematic Knock-on in Sims
    Albers J.

    A Comparative Study of Carrier Concentration Profiling Techniques in Silicon: Spreading Resistance and Electrochemical CV
    Groves R., Kubiak R., Leong W., Parker E., Pawlik M.

    Analysis of Boron Profiles As Determined by Secondary Ion Mass Spectrometry, Spreading Resistance, and Process Modeling
    Banke G., Slusser G., Varahramyan K.

    Mapping Silicon Wafers by Spreading Resistance
    Mazur R.

    Production Monitoring of 200MM Wafer Processing
    Johnson W., Keenan W., Smith A.

    Applications of x-ray Fluorescence Analysis to the Thin Layer on Silicon Wafers
    Arai T., Ochiai T., Sano M., Shiraiwa T., Tada Y.

    Qualification of GaAs and AlGaAs by Optical and Surface Analysis Techniques
    Berak J., Black J., Peterson G.

    Wafer Fab Automation, an Integral Part of the CAM Environment
    Fiorletta C., Harper J., Lennard R.

    Computer Integrated Manufacturing: The Realities and Hidden Costs of Automation
    Ligeti M.

    Industry Considerations in Determining Equipment Reliability
    Greiner J.

    Appendices

    Subject Index

    Author Index


    Committee: F01

    Paper ID: STP960-EB

    DOI: 10.1520/STP960-EB

    ISBN-EB: 978-0-8031-5021-8

    ISBN-13: 978-0-8031-0459-4

    ASTM International is a member of CrossRef.

    0-8031-0459-6
    978-0-8031-0459-4
    STP960-EB