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Digital Library / STP / STP960-EB
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Emerging Semiconductor Technology
Gupta DC
Pages: 699
Published: 1987
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Description
Table of Contents
Introduction
Gupta DC
Silicon and Semiconductors: Partners in the Late 1980's
Springgate JE
ASTM and Semi Standards for the Semiconductor Industry
Scace RI
Low Temperature and Low Pressure Silicon Epitaxy by Plasma-Enhanced CVD
Reif R
Thin Silicon Epitaxial Films Deposited at Low Temperatures
Chang H-R, Rosczak JS
Thin Epitaxial Silicon by CVD
Fisher SM, Hammond ML, Sandler NP
Effects of Gettering on Epi Quality for CMOS Technology
Daniel Wong C-C, Borland JO, Hahn S
Silicon Epitaxial Growth on N+ Substrate for CMOS Products
Swaroop RB
Characterization of the in Situ HCl Etch for Epitaxial Silicon
Medernach JW, Wells VA
Doped Oxide Spin-On Source Diffusion
Ramamurthy V
Effect of a Shallow Xenon Implantation on a Profile Measured by Spreading Resistance
Lora-Tamayo E, Du Port de Pontcharra J, Bruel M
Measurements of Cross-Contamination Levels Produced by Ion Implanters
Larson LA, Kirby BJ
Some Aspects of Productivity of a Low Pressure CVD Reactor
Middleman S
Deposition and Properties of Ultra-Thin High Dielectric Constant Insulators
Roberts S, Ryan JG, Martin DW
The Electrical Properties of MOS Transistors Fabricated with Direct Ion Beam Nitridation
Lee H-S
Rie Damage and Its Control in Silicon Processing
Fonash SJ, Rohatgi A
The Bonding Structure and Compositional Analysis of Plasma Enhanced and Low Pressure Chemical Vapor Deposited Silicon Dielectric Films
Nguyen SV, Abernathey JR, Fridmann SA, Gibson ML
Monte Carlo Simulation of Plasma Etch Emission Endpoint
Bawolek EJ
Profile Control of Plasma Etched Polysilicon Using Implant Doping
Abraham T, Theriault R
The Effects of Plasma Processing of Dielectric Layers on Gallium Arsenide Integrated Circuits
Vanner KC, Cockrill JR, Turner JA
Quality Control and Optimization During Plasma Deposition of a-Si:H
Kunst M, Werner A, Beck G, Kuppers U, Tributsch H
Effects of Deep UV Radiation on Photoresist in Al Etch
Lee SC, Chin BL
Influence of X-Ray Exposure Conditions on Pattern Quality
Starov V
Palladium Silicide Contact Process Development for VLSI
Singh RN
Characterization of Silicon Surface Defects by the Laser Scanning Technique
Liaw HM, Rose JW, Nguyen HT
Damage Aspects of Ingot-to-Wafer Processing
Dyer LD
Hydrogen in silicon and generation of haze on silicon surface in aging
Shiraiwa T, Inenaga S
Identifying Gettered Impurities in Silicon by LIMA Analysis
Arst MC
Effect of Bulk Defects in Silicon on SiO Film Breakdown
Suga H, Murai K
Free Carrier Absorption and Interstitial Oxygen Measurements
Gladden WK, Baghdadi A
High Reliability Infrared Measurements of Oxygen and Carbon in Silicon
Inoue N, Arai T, Nozaki T, Endo K, Mizuma K
Nature of Process-Induced Si-SiO Defects and Their Interaction with Illumination
Kar S, Tewari M
A Strategy for Reducing Variability in a Production Semiconductor Fabrication Area Using the Generation of System Moments Method
Maass EC
Computerized Yield Modeling
Beck CH
Particle and Material Control Automation System for VLSI Manufacturing
Brain MD
Semiconductor Yield Enhancement Through Particle Control
Casper ND, Soren BW
Particulate Control in VLSI Gases
Davidson JM, Ruane TP
Spreading Resistance Measurements An Overview
Ehrstein JR
Some Aspects of Spreading Resistance Profile Analysis
Albers J
Spreading Resistance : A Comparison of Sampling Volume Correction Factors in High Resolution Quantitative Spreading Resistance
Pawlik M
Comparison of Impurity Profiles Generated by Spreading Resistance Probe and Secondary Ion Mass Spectrometry
Sweeney GG, Alvarez TR
Monte Carlo Calculation of Primary Kinematic Knock-on in Sims
Albers J
A Comparative Study of Carrier Concentration Profiling Techniques in Silicon: Spreading Resistance and Electrochemical CV
Pawlik M, Groves RD, Kubiak RA, Leong WY, Parker EHC
Analysis of Boron Profiles As Determined by Secondary Ion Mass Spectrometry, Spreading Resistance, and Process Modeling
Banke GW, Varahramyan K, Slusser GJ
Mapping Silicon Wafers by Spreading Resistance
Mazur RG
Production Monitoring of 200MM Wafer Processing
Keenan WA, Johnson WH, Smith AK
Applications of x-ray Fluorescence Analysis to the Thin Layer on Silicon Wafers
Shiraiwa T, Ochiai T, Sano M, Tada Y, Arai T
Qualification of GaAs and AlGaAs by Optical and Surface Analysis Techniques
Black JF, Berak JM, Peterson GG
Wafer Fab Automation, an Integral Part of the CAM Environment
Fiorletta CA, Lennard R, Harper JG
Computer Integrated Manufacturing: The Realities and Hidden Costs of Automation
Ligeti MS
Industry Considerations in Determining Equipment Reliability
Greiner JC
Subject Index
Author Index
Committee: F01
Paper ID: STP960-EB
DOI: 10.1520/STP960-EB
 ASTM International is a member of CrossRef.
0-8031-0459-6
978-0-8031-0459-4
STP960-EB
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