|
|
|
Digital Library / STP / STP850-EB
 |
STP850
Semiconductor Processing
Gupta DC
Pages: 664
Published: 1984
Format: PDF (9.6M)
Price: $66 [Download Now]
|
|
This volume addresses the problems in semiconductor technology that arise from rapid increase in device complexity and performance, the emergence of integrated systems-on-a-chip, automated factories, and silicon foundries. The book's theme is that the realization of acceptable yields and reliability will require greater manufacturing discipline from starting materials to finished devices. 51 papers cover crystal growth and epitaxial depositing, control of contaminants, material characterization defects, interconnection technology, ion implantation, and special processing techniques.
Table of Contents
Introduction
Gupta D.
The Impact of Standards on Semiconductor Quality and Manufacturing Efficiency
Murray Bullis W.
Process and Device Modeling for VLSI Structures
Plummer J.
Effect of Process Conditions on Autodoping in Silicon Epitaxy
Chang H.
An Intrinsic Gettering Process to Improve Minority Carrier Lifetimes in Mos and Bipolar Silicon Epitaxial Technology
Borland J., Kuo M., Shibley J., Roberts B., Schindler R., Dalrymple T.
Control of Gain Variations in Shallow Junction Ion Implanted Bipolar Transistors Caused by Planar Channelling
Bazley D.
Ion Implantation for Deep (> 100 μm) Buried Layers
Fahrner W., Bräunig D., Knoll M., Laschinski J.
A Study of Strain in Ion Implanted Silicon
Sasaki M., Sakamoto K.
Dry Etching Using NF3/Ar and NF3/He Plasmas
Barkanic J., Hoff A., Stach J., Golja B.
Edge-Controlled, Self-Consistent Proximity Effect Corrections
Berkowitz H., Cook C., Kwiatkowski J., Goodreau W.
The Effect of Wafer Flatness on Yield by Off-Line Computer Simulation of the Photolithographic Process
Denes L.
Forms of Contamination Affecting Device Processing
Rapa A.
Problems Associated with Submicrometre Contaminant Measurement
Lieberman A.
Point-Of-Use Ultrafiltration of Deionized Rinse Water and Effects on Microelectronics Device Quality
Gaudet P.
The Effects of Wafer Thermal History on the 450°C Thermal Donor Formation in Cz- Grown P(100) Silicon
Borland J.
Interaction Between Point Defects and Oxygen in Silicon
Monkowski J., Heck D., Baginski T., Kenney D., Tressler R.
Effects of Oxygen on Process-Induced Defects and Gettering in Cz-Silicon
Swaroop R.
Precipitation Behavior of Deposited Metals in Cz-Silicon
Suga H., Shimanuki Y., Murai K., Endo K.
Evaluation of Gettering Efficiency of Backside Damage by the Use of the “Haze” Test
Domenici M., Ferrero G., Malinverni P.
Extrinsic Gettering Via the Controlled Introduction of Misfit Dislocations
Salih A., Kim H., Davis R., Rozgonyi G.
The Effect of Si-SiO2 Interface on the Excess Point Defect Distribution in Silicon
Shin Y., Kim C.
Fracture Tracing in Semiconductor Wafers
Dyer L.
A Preferential Etch for Silicon Crystals
Yang K.
Oxygen Determination in Silicon Using Fourier Transform Infrared Spectroscopy
Shive L., Schulte B.
A Study of the Spatial Distribution of the Oxygen Content in Silicon Wafers Using an Infrared Transmission Microscope
Krishnan K., Kuehl D.
Influence of Electrically Active Impurities on IR Measurements of Interstitial Oxygen in Silicon
Weeks S.
The Effects of Instrumental Artifacts on the Quantitative Determination of Oxygen in Silicon by Ftir
Baghdadi A.
Simultaneous Determination of the Boron and Phosphorus Content in Silicate Glasses by FT-IR Spectroscopy
Krishnan K.
A Method to Determine the Initial Phosphorus and Boron Concentrations in Float-Zoned Polysilicon Rods
Chiou H.
The Effects of RF Electromagnetic Radiation on Spreading Resistance Measurements
Mazur R.
Dopant Profiling in Silicon
Pawlik M.
Comparison of Depth Profiling 10B in Silicon Using Spreading Resistance Profiling, Secondary Ion Mass Spectrometry, and Neutron Depth Profiling
Ehrstein J., Downing R., Stallard B., Simons D., Fleming R.
The Ball Bond Shear Test: Its Methodology and Application
Charles H., Clatterbaugh G., Weiner J.
The Annealing and Low Temperature Aging Characteristics of Fine Diameter Wire Produced from Dilute Aluminum Alloys
Hebert D.
Capacitive Microphone Tuning of Ultrasonic/Thermosonic Bonders
Loofbourrow W.
A Comparative Study of the Mechanical Properties of Bonding Wire
Hannula S., Wanagel J., Li C.
New Applications of Tape Bonding for High Lead Count Devices
Marshall J., Sheppard R.
Bumped Tape Processing and Application
Lindberg F.
Production and Development of Neutron Transmutation Doped Silicon
Herzer H.
Production of Detector-Grade Silicon by Neutron Transmutation Doping
Ammon W., Kemmer J.
Neutron Transmutation Doping in Hydrogenated Amorphous Silicon
Hamanaka H., Kuriyama K., Yahagi M., Iwamura K., Kim C., Shiraishi F., Tsuji K., Minomura S.
Effects of Hydrogen on Defects in Neutron Irradiated Silicon
Du Y., Zhang Y., Meng X.
Neutron Transmutation Doping of Semi-Insulating Czochralskigrown GaAs
Hunter A., Young M., Winston H., Marsh O., Hart R.
Ion Channeling Study of Damage in Neutron Transmutation Doped Semiconductors: Application to GaAs
Yahagi M., Satoh M., Kuriyama K., Iwamura K., Kim C., Shiraishi F.
A New Silicon Irradiation Facility in the Pluto Mtr at Harwell
Baxter J., Crick N.
Equalization of Axial Neutron Flux Density for the Transmutation Doping of Silicon in a Heavy Water Reactor
Andresen K., Heydorn K., Nonbøl E.
Potential for Large-Diameter NTD Silicon Production in the Advanced Test Reactor
Herring J., Korenke R.
Advanced Test Reactor Ntd Silicon Production Hardware
Schell M.
Appendices
Index
Committee: F01
Paper ID: STP850-EB
DOI: 10.1520/STP850-EB
ISBN-EB: 978-0-8031-4915-1
 ASTM International is a member of CrossRef.
0-8031-0403-0
978-0-8031-0403-7
STP850-EB
|