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    Semiconductor Processing

    Gupta DC
    Published: 1984

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    This volume addresses the problems in semiconductor technology that arise from rapid increase in device complexity and performance, the emergence of integrated systems-on-a-chip, automated factories, and silicon foundries. The book's theme is that the realization of acceptable yields and reliability will require greater manufacturing discipline from starting materials to finished devices. 51 papers cover crystal growth and epitaxial depositing, control of contaminants, material characterization defects, interconnection technology, ion implantation, and special processing techniques.

    Table of Contents


    The Impact of Standards on Semiconductor Quality and Manufacturing Efficiency

    Process and Device Modeling for VLSI Structures

    Effect of Process Conditions on Autodoping in Silicon Epitaxy

    An Intrinsic Gettering Process to Improve Minority Carrier Lifetimes in Mos and Bipolar Silicon Epitaxial Technology

    Control of Gain Variations in Shallow Junction Ion Implanted Bipolar Transistors Caused by Planar Channelling

    Ion Implantation for Deep (> 100 μm) Buried Layers

    A Study of Strain in Ion Implanted Silicon

    Dry Etching Using NF3/Ar and NF3/He Plasmas

    Edge-Controlled, Self-Consistent Proximity Effect Corrections

    The Effect of Wafer Flatness on Yield by Off-Line Computer Simulation of the Photolithographic Process

    Forms of Contamination Affecting Device Processing

    Problems Associated with Submicrometre Contaminant Measurement

    Point-Of-Use Ultrafiltration of Deionized Rinse Water and Effects on Microelectronics Device Quality

    The Effects of Wafer Thermal History on the 450°C Thermal Donor Formation in Cz- Grown P(100) Silicon

    Interaction Between Point Defects and Oxygen in Silicon

    Effects of Oxygen on Process-Induced Defects and Gettering in Cz-Silicon

    Precipitation Behavior of Deposited Metals in Cz-Silicon

    Evaluation of Gettering Efficiency of Backside Damage by the Use of the “Haze” Test

    Extrinsic Gettering Via the Controlled Introduction of Misfit Dislocations

    The Effect of Si-SiO2 Interface on the Excess Point Defect Distribution in Silicon

    Fracture Tracing in Semiconductor Wafers

    A Preferential Etch for Silicon Crystals

    Oxygen Determination in Silicon Using Fourier Transform Infrared Spectroscopy

    A Study of the Spatial Distribution of the Oxygen Content in Silicon Wafers Using an Infrared Transmission Microscope

    Influence of Electrically Active Impurities on IR Measurements of Interstitial Oxygen in Silicon

    The Effects of Instrumental Artifacts on the Quantitative Determination of Oxygen in Silicon by Ftir

    Simultaneous Determination of the Boron and Phosphorus Content in Silicate Glasses by FT-IR Spectroscopy

    A Method to Determine the Initial Phosphorus and Boron Concentrations in Float-Zoned Polysilicon Rods

    The Effects of RF Electromagnetic Radiation on Spreading Resistance Measurements

    Dopant Profiling in Silicon

    Comparison of Depth Profiling 10B in Silicon Using Spreading Resistance Profiling, Secondary Ion Mass Spectrometry, and Neutron Depth Profiling

    The Ball Bond Shear Test: Its Methodology and Application

    The Annealing and Low Temperature Aging Characteristics of Fine Diameter Wire Produced from Dilute Aluminum Alloys

    Capacitive Microphone Tuning of Ultrasonic/Thermosonic Bonders

    A Comparative Study of the Mechanical Properties of Bonding Wire

    New Applications of Tape Bonding for High Lead Count Devices

    Bumped Tape Processing and Application

    Production and Development of Neutron Transmutation Doped Silicon

    Production of Detector-Grade Silicon by Neutron Transmutation Doping

    Neutron Transmutation Doping in Hydrogenated Amorphous Silicon

    Effects of Hydrogen on Defects in Neutron Irradiated Silicon

    Neutron Transmutation Doping of Semi-Insulating Czochralskigrown GaAs

    Ion Channeling Study of Damage in Neutron Transmutation Doped Semiconductors: Application to GaAs

    A New Silicon Irradiation Facility in the Pluto Mtr at Harwell

    Equalization of Axial Neutron Flux Density for the Transmutation Doping of Silicon in a Heavy Water Reactor

    Potential for Large-Diameter NTD Silicon Production in the Advanced Test Reactor

    Advanced Test Reactor Ntd Silicon Production Hardware



    Committee: F01

    DOI: 10.1520/STP850-EB

    ISBN-EB: 978-0-8031-4915-1

    ISBN-13: 978-0-8031-0403-7

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