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Digital Library / STP / STP850-EB
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Semiconductor Processing
Gupta DC
Pages: 664
Published: 1984
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Table of Contents
Introduction
Gupta DC
The Impact of Standards on Semiconductor Quality and Manufacturing Efficiency
Murray Bullis W
Process and Device Modeling for VLSI Structures
Plummer JD
Effect of Process Conditions on Autodoping in Silicon Epitaxy
Chang H-R
An Intrinsic Gettering Process to Improve Minority Carrier Lifetimes in Mos and Bipolar Silicon Epitaxial Technology
Borland JO, Kuo M, Shibley J, Roberts B, Schindler R, Dalrymple T
Control of Gain Variations in Shallow Junction Ion Implanted Bipolar Transistors Caused by Planar Channelling
Bazley DJ
Ion Implantation for Deep (> 100 m) Buried Layers
Fahrner WR, Bräunig D, Knoll M, Laschinski JR
A Study of Strain in Ion Implanted Silicon
Sasaki M, Sakamoto K
Dry Etching Using NF/Ar and NF/He Plasmas
Barkanic J, Hoff A, Stach J, Golja B
Edge-Controlled, Self-Consistent Proximity Effect Corrections
Berkowitz HL, Cook CF, Kwiatkowski JH, Goodreau WM
The Effect of Wafer Flatness on Yield by Off-Line Computer Simulation of the Photolithographic Process
Denes L
Forms of Contamination Affecting Device Processing
Rapa AC
Problems Associated with Submicrometre Contaminant Measurement
Lieberman A
Point-Of-Use Ultrafiltration of Deionized Rinse Water and Effects on Microelectronics Device Quality
Gaudet PW
The Effects of Wafer Thermal History on the 450°C Thermal Donor Formation in Cz- Grown P(100) Silicon
Borland JO
Interaction Between Point Defects and Oxygen in Silicon
Monkowski JR, Heck D, Baginski TA, Kenney D, Tressler RE
Effects of Oxygen on Process-Induced Defects and Gettering in Cz-Silicon
Swaroop RB
Precipitation Behavior of Deposited Metals in Cz-Silicon
Suga H, Shimanuki Y, Murai K, Endo K
Evaluation of Gettering Efficiency of Backside Damage by the Use of the Haze Test
Domenici M, Ferrero G, Malinverni P
Extrinsic Gettering Via the Controlled Introduction of Misfit Dislocations
Salih ASM, Kim HJ, Davis RF, Rozgonyi GA
The Effect of Si-SiO Interface on the Excess Point Defect Distribution in Silicon
Shin Y-S, Kim C-K
Fracture Tracing in Semiconductor Wafers
Dyer LD
A Preferential Etch for Silicon Crystals
Yang KH
Oxygen Determination in Silicon Using Fourier Transform Infrared Spectroscopy
Shive LW, Schulte BK
A Study of the Spatial Distribution of the Oxygen Content in Silicon Wafers Using an Infrared Transmission Microscope
Krishnan K, Kuehl D
Influence of Electrically Active Impurities on IR Measurements of Interstitial Oxygen in Silicon
Weeks SP
The Effects of Instrumental Artifacts on the Quantitative Determination of Oxygen in Silicon by Ftir
Baghdadi A
Simultaneous Determination of the Boron and Phosphorus Content in Silicate Glasses by FT-IR Spectroscopy
Krishnan K
A Method to Determine the Initial Phosphorus and Boron Concentrations in Float-Zoned Polysilicon Rods
Chiou H-D
The Effects of RF Electromagnetic Radiation on Spreading Resistance Measurements
Mazur RG
Dopant Profiling in Silicon
Pawlik M
Comparison of Depth Profiling B in Silicon Using Spreading Resistance Profiling, Secondary Ion Mass Spectrometry, and Neutron Depth Profiling
Ehrstein JR, Downing RG, Stallard BR, Simons DS, Fleming RF
The Ball Bond Shear Test: Its Methodology and Application
Charles HK, Clatterbaugh GV, Weiner JA
The Annealing and Low Temperature Aging Characteristics of Fine Diameter Wire Produced from Dilute Aluminum Alloys
Hebert DF
Capacitive Microphone Tuning of Ultrasonic/Thermosonic Bonders
Loofbourrow WL
A Comparative Study of the Mechanical Properties of Bonding Wire
Hannula S-P, Wanagel J, Li C-Y
New Applications of Tape Bonding for High Lead Count Devices
Marshall JF, Sheppard RP
Bumped Tape Processing and Application
Lindberg FA
Production and Development of Neutron Transmutation Doped Silicon
Herzer H
Production of Detector-Grade Silicon by Neutron Transmutation Doping
Ammon Wv, Kemmer J
Neutron Transmutation Doping in Hydrogenated Amorphous Silicon
Hamanaka H, Kuriyama K, Yahagi M, Iwamura K, Kim C, Shiraishi F, Tsuji K, Minomura S
Effects of Hydrogen on Defects in Neutron Irradiated Silicon
Du YC, Zhang YF, Meng XT
Neutron Transmutation Doping of Semi-Insulating Czochralskigrown GaAs
Hunter AT, Young MH, Winston HV, Marsh OJ, Hart RR
Ion Channeling Study of Damage in Neutron Transmutation Doped Semiconductors: Application to GaAs
Yahagi M, Satoh M, Kuriyama K, Iwamura K, Kim C, Shiraishi F
A New Silicon Irradiation Facility in the Pluto Mtr at Harwell
Baxter J, Crick NW
Equalization of Axial Neutron Flux Density for the Transmutation Doping of Silicon in a Heavy Water Reactor
Andresen K, Heydorn K, Nonbøl E
Potential for Large-Diameter NTD Silicon Production in the Advanced Test Reactor
Herring JS, Korenke RE
Advanced Test Reactor Ntd Silicon Production Hardware
Schell MJ
Index
Committee: F01
Paper ID: STP850-EB
DOI: 10.1520/STP850-EB
 ASTM International is a member of CrossRef.
0-8031-0403-0
978-0-8031-0403-7
STP850-EB
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