|
|
|
Digital Library / STP / STP804-EB
 |
Silicon Processing
Gupta DC
Pages: 555
Published: 1983
|
Download this E-Book for $66 PDF (9.2M)
View License Agreement
Hard Copy version
Overview PDF
Description
Table of Contents
Introduction
Gupta DC
Silicon Crystal Growth and Processing Technology: A Review
Bonora AC
Large-Diameter Czochralski Silicon Crystal Growth
Lin W, Hill DW
Impurity Incorporation in Czochralski Silicon Grown for VLSI
Murgai A
Dependence of Silicon Float-Zone Refining Parameters on Frequency
Gupta KP, Gregory RO
Influence of Laser Marking on Silicon Wafer Properties
Christ MH, Maurantonio BS
A Review of Optical Lithographic Techniques for VLSI
Doane DA
Resist Profile Quality and Linewidth Control
Neureuther AR
Considerations of Resist Processing
Bowden MJ, Frackoviak J
Epitaxy: An Introspective Review
Williams JH
Modeling and Applications of Silicon Epitaxy
Srinivasan GR
Effects of Processing Parameters on Shallow Surface Depressions During Silicon Epitaxial Deposition
Boydston MR, Gruber GA, Gupta DC
Improvement in MOS VLSI Device Characteristics Built on Epitaxial Silicon
White LS, Mohan Rao GR, Linder P, Zivitz M
Reduced-Pressure Chemical Vapor Deposition of Polycrystalline Silicon
Hammond ML
Plasma-Enhanced Chemical Vapor Deposition of Silicon and Silicon-Containing Films
Hess DW
Process Technology Requirements for VLSIC Fabrication
Kumar R, Nowak MM, Tyler EH, Vinson MA
Defects and High-Pressure Steam Oxidation of Silicon
Katz LE
Hydrogen/Chlorine Distributions in Silicon Dioxide: Detection and Model
Monkowski JR, Monkowski MD, Tsong IST, Stach J
Dependence of Thin-Gate Oxide Properties on Processing
Lai SK
Polyimide-Substrate Effects During Wet Chemical Processing of Polyimide Films in VLSI
Belton DJ, van Pelt P, Morgan AE
Modeling Anomalous Junction Formation in Silicon by the Codiffusion of Implanted Arsenic with Phosphorus
Fair RB, Meyer WG
Silicon Crystals for VLSI Technologies
Jastrzebski L
Material Defect Factors Affecting MOS Device Performance
Matlock JH
Oxygen Precipitation Studies at Various Impurity Levels Using Thermal Donor Activation
Allison JC, Maxwell OF, Schindler R, Domenici M
Effects of Oxygen Precipitation on Minority Carrier Lifetime in Silicon Crystals
Varker CJ, Whitfield JD, Fejes PL
Defects and Carrier Lifetime in Silicon
Rohatgi A, Rai-Choudhury P
Computer-Aided Process Modeling for Design and Process Control
Dutton RW, Fahey P, Doganis K, Mei L, Lee HG
Characterizing Process Nonuniformities on Large-Diameter Wafers: An Overview
Perloff DS
Temperature-Dependent Infrared Characterization of Silicon Wafers
Mead DG, Gummer RM, Anderson CR
Analysis of Infrared Spectra for Oxygen Measurements in Silicon
Graupner RK
Determination of Oxygen Concentration in Silicon by Infrared Absorption
Abe T, Gotoh S, Ozawa N, Masui T
Thickness Measurement of Thin (1.0-µm) Epitaxial Silicon Layers by Infrared Reflectance
Weeks SP
Automated Detection of Wafer Surface Defects by Laser Scanning
Galbraith LK
Computerized Electron-Beam Linewidth Measuring and Inspection: A New Tool
Pomposo TF, Coates VJ
Measurement of Ion Implantation Doses in Silicon by Ellipsometry and Spectral Reflectance
Hochberg AK
Index
Committee: F01
Paper ID: STP804-EB
DOI: 10.1520/STP804-EB
ASTM International is a member of CrossRef.
0-8031-0243-7
978-0-8031-0243-9
STP804-EB
|