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Silicon Processing Gupta DC Pages: 555       Published: 1983

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Table of Contents

Introduction
Gupta DC

Silicon Crystal Growth and Processing Technology: A Review
Bonora AC

Large-Diameter Czochralski Silicon Crystal Growth
Lin W, Hill DW

Impurity Incorporation in Czochralski Silicon Grown for VLSI
Murgai A

Dependence of Silicon Float-Zone Refining Parameters on Frequency
Gupta KP, Gregory RO

Influence of Laser Marking on Silicon Wafer Properties
Christ MH, Maurantonio BS

A Review of Optical Lithographic Techniques for VLSI
Doane DA

Resist Profile Quality and Linewidth Control
Neureuther AR

Considerations of Resist Processing
Bowden MJ, Frackoviak J

Epitaxy: An Introspective Review
Williams JH

Modeling and Applications of Silicon Epitaxy
Srinivasan GR

Effects of Processing Parameters on Shallow Surface Depressions During Silicon Epitaxial Deposition
Boydston MR, Gruber GA, Gupta DC

Improvement in MOS VLSI Device Characteristics Built on Epitaxial Silicon
White LS, Mohan Rao GR, Linder P, Zivitz M

Reduced-Pressure Chemical Vapor Deposition of Polycrystalline Silicon
Hammond ML

Plasma-Enhanced Chemical Vapor Deposition of Silicon and Silicon-Containing Films
Hess DW

Process Technology Requirements for VLSIC Fabrication
Kumar R, Nowak MM, Tyler EH, Vinson MA

Defects and High-Pressure Steam Oxidation of Silicon
Katz LE

Hydrogen/Chlorine Distributions in Silicon Dioxide: Detection and Model
Monkowski JR, Monkowski MD, Tsong IST, Stach J

Dependence of Thin-Gate Oxide Properties on Processing
Lai SK

Polyimide-Substrate Effects During Wet Chemical Processing of Polyimide Films in VLSI
Belton DJ, van Pelt P, Morgan AE

Modeling Anomalous Junction Formation in Silicon by the Codiffusion of Implanted Arsenic with Phosphorus
Fair RB, Meyer WG

Silicon Crystals for VLSI Technologies
Jastrzebski L

Material Defect Factors Affecting MOS Device Performance
Matlock JH

Oxygen Precipitation Studies at Various Impurity Levels Using Thermal Donor Activation
Allison JC, Maxwell OF, Schindler R, Domenici M

Effects of Oxygen Precipitation on Minority Carrier Lifetime in Silicon Crystals
Varker CJ, Whitfield JD, Fejes PL

Defects and Carrier Lifetime in Silicon
Rohatgi A, Rai-Choudhury P

Computer-Aided Process Modeling for Design and Process Control
Dutton RW, Fahey P, Doganis K, Mei L, Lee HG

Characterizing Process Nonuniformities on Large-Diameter Wafers: An Overview
Perloff DS

Temperature-Dependent Infrared Characterization of Silicon Wafers
Mead DG, Gummer RM, Anderson CR

Analysis of Infrared Spectra for Oxygen Measurements in Silicon
Graupner RK

Determination of Oxygen Concentration in Silicon by Infrared Absorption
Abe T, Gotoh S, Ozawa N, Masui T

Thickness Measurement of Thin (1.0-µm) Epitaxial Silicon Layers by Infrared Reflectance
Weeks SP

Automated Detection of Wafer Surface Defects by Laser Scanning
Galbraith LK

Computerized Electron-Beam Linewidth Measuring and Inspection: A New Tool
Pomposo TF, Coates VJ

Measurement of Ion Implantation Doses in Silicon by Ellipsometry and Spectral Reflectance
Hochberg AK

Index


Committee: F01
Paper ID: STP804-EB
DOI: 10.1520/STP804-EB

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0-8031-0243-7
978-0-8031-0243-9
STP804-EB