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    STP804

    Silicon Processing

    Gupta DC
    Published: 1983


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    The 38 papers that comprise this book's contents emphasize day-to-day problems in silicon processing from its simplest use through advanced and emerging applications to very large scale integration circuits. The problem areas and standardization needs identified in the papers presented will provide feedback to the research community concerning the future growth of the industry.


    Table of Contents

    Introduction

    Silicon Crystal Growth and Processing Technology: A Review

    Large-Diameter Czochralski Silicon Crystal Growth

    Impurity Incorporation in Czochralski Silicon Grown for VLSI

    Dependence of Silicon Float-Zone Refining Parameters on Frequency

    Influence of Laser Marking on Silicon Wafer Properties

    A Review of Optical Lithographic Techniques for VLSI

    Resist Profile Quality and Linewidth Control

    Considerations of Resist Processing

    Epitaxy: An Introspective Review

    Modeling and Applications of Silicon Epitaxy

    Effects of Processing Parameters on Shallow Surface Depressions During Silicon Epitaxial Deposition

    Improvement in MOS VLSI Device Characteristics Built on Epitaxial Silicon

    Reduced-Pressure Chemical Vapor Deposition of Polycrystalline Silicon

    Plasma-Enhanced Chemical Vapor Deposition of Silicon and Silicon-Containing Films

    Process Technology Requirements for VLSIC Fabrication

    Defects and High-Pressure Steam Oxidation of Silicon

    Hydrogen/Chlorine Distributions in Silicon Dioxide: Detection and Model

    Dependence of Thin-Gate Oxide Properties on Processing

    Polyimide-Substrate Effects During Wet Chemical Processing of Polyimide Films in VLSI

    Modeling Anomalous Junction Formation in Silicon by the Codiffusion of Implanted Arsenic with Phosphorus

    Silicon Crystals for VLSI Technologies

    Material Defect Factors Affecting MOS Device Performance

    Oxygen Precipitation Studies at Various Impurity Levels Using Thermal Donor Activation

    Effects of Oxygen Precipitation on Minority Carrier Lifetime in Silicon Crystals

    Defects and Carrier Lifetime in Silicon

    Computer-Aided Process Modeling for Design and Process Control

    Characterizing Process Nonuniformities on Large-Diameter Wafers: An Overview

    Temperature-Dependent Infrared Characterization of Silicon Wafers

    Analysis of Infrared Spectra for Oxygen Measurements in Silicon

    Determination of Oxygen Concentration in Silicon by Infrared Absorption

    Thickness Measurement of Thin (1.0-µm) Epitaxial Silicon Layers by Infrared Reflectance

    Automated Detection of Wafer Surface Defects by Laser Scanning

    Computerized Electron-Beam Linewidth Measuring and Inspection: A New Tool

    Measurement of Ion Implantation Doses in Silicon by Ellipsometry and Spectral Reflectance

    Appendices

    Index


    Committee: F01

    DOI: 10.1520/STP804-EB

    ISBN-EB: 978-0-8031-4871-0

    ISBN-13: 978-0-8031-0243-9

    ASTM International is a member of CrossRef.

    0-8031-0243-7
    978-0-8031-0243-9
    STP804-EB