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Digital Library / STP / STP804-EB
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STP804
Silicon Processing
Gupta DC
Pages: 555
Published: 1983
Format: PDF (9.2M)
Price: $66 [Download Now]
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The 38 papers that comprise this book's contents emphasize day-to-day problems in silicon processing from its simplest use through advanced and emerging applications to very large scale integration circuits. The problem areas and standardization needs identified in the papers presented will provide feedback to the research community concerning the future growth of the industry.
Table of Contents
Introduction
Gupta D.
Silicon Crystal Growth and Processing Technology: A Review
Bonora A.
Large-Diameter Czochralski Silicon Crystal Growth
Lin W., Hill D.
Impurity Incorporation in Czochralski Silicon Grown for VLSI
Murgai A.
Dependence of Silicon Float-Zone Refining Parameters on Frequency
Gupta K., Gregory R.
Influence of Laser Marking on Silicon Wafer Properties
Christ M., Maurantonio B.
A Review of Optical Lithographic Techniques for VLSI
Doane D.
Resist Profile Quality and Linewidth Control
Neureuther A.
Considerations of Resist Processing
Bowden M., Frackoviak J.
Epitaxy: An Introspective Review
Williams J.
Modeling and Applications of Silicon Epitaxy
Srinivasan G.
Effects of Processing Parameters on Shallow Surface Depressions During Silicon Epitaxial Deposition
Boydston M., Gruber G., Gupta D.
Improvement in MOS VLSI Device Characteristics Built on Epitaxial Silicon
White L., Mohan Rao G., Linder P., Zivitz M.
Reduced-Pressure Chemical Vapor Deposition of Polycrystalline Silicon
Hammond M.
Plasma-Enhanced Chemical Vapor Deposition of Silicon and Silicon-Containing Films
Hess D.
Process Technology Requirements for VLSIC Fabrication
Kumar R., Nowak M., Tyler E., Vinson M.
Defects and High-Pressure Steam Oxidation of Silicon
Katz L.
Hydrogen/Chlorine Distributions in Silicon Dioxide: Detection and Model
Monkowski J., Monkowski M., Tsong I., Stach J.
Dependence of Thin-Gate Oxide Properties on Processing
Lai S.
Polyimide-Substrate Effects During Wet Chemical Processing of Polyimide Films in VLSI
Belton D., van Pelt P., Morgan A.
Modeling Anomalous Junction Formation in Silicon by the Codiffusion of Implanted Arsenic with Phosphorus
Fair R., Meyer W.
Silicon Crystals for VLSI Technologies
Jastrzebski L.
Material Defect Factors Affecting MOS Device Performance
Matlock J.
Oxygen Precipitation Studies at Various Impurity Levels Using Thermal Donor Activation
Allison J., Maxwell O., Schindler R., Domenici M.
Effects of Oxygen Precipitation on Minority Carrier Lifetime in Silicon Crystals
Varker C., Whitfield J., Fejes P.
Defects and Carrier Lifetime in Silicon
Rohatgi A., Rai-Choudhury P.
Computer-Aided Process Modeling for Design and Process Control
Dutton R., Fahey P., Doganis K., Mei L., Lee H.
Characterizing Process Nonuniformities on Large-Diameter Wafers: An Overview
Perloff D.
Temperature-Dependent Infrared Characterization of Silicon Wafers
Mead D., Gummer R., Anderson C.
Analysis of Infrared Spectra for Oxygen Measurements in Silicon
Graupner R.
Determination of Oxygen Concentration in Silicon by Infrared Absorption
Abe T., Gotoh S., Ozawa N., Masui T.
Thickness Measurement of Thin (1.0-µm) Epitaxial Silicon Layers by Infrared Reflectance
Weeks S.
Automated Detection of Wafer Surface Defects by Laser Scanning
Galbraith L.
Computerized Electron-Beam Linewidth Measuring and Inspection: A New Tool
Pomposo T., Coates V.
Measurement of Ion Implantation Doses in Silicon by Ellipsometry and Spectral Reflectance
Hochberg A.
Appendices
Index
Committee: F01
Paper ID: STP804-EB
DOI: 10.1520/STP804-EB
ISBN-EB: 978-0-8031-4871-0
 ASTM International is a member of CrossRef.
0-8031-0243-7
978-0-8031-0243-9
STP804-EB
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