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Lifetime Factors in Silicon Westbrook RD Pages: 252       Published: 1980

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Table of Contents

Introduction
Westbrook RD

Minority Carrier Lifetime Characteristics in Semiconductor SiliconAn Overview
Vieweg-Gutberlet FG

Survey of Literature on Minority Carrier Lifetimes in Silicon and Related Topics
Ross B

Influence of Collector Recombination Lifetime on the Current Gain and Storage Time of High-Voltage Power Transitors
Hower PL

Effects of Carrier Lifetime and End-Region Recombination on the Forward Current and Switching Behavior of Power Pin Diodes
Cooper RW, Fagg S, Paxman DH, Slatter JAG

Dynamic Storage Time Measurements on Metal Oxide Semiconductor-Random Access Memory Circuits
Gosney WM

Minority Carrier Lifetime Degradation in Silicon Due to Thermally Generated Dislocations
Liang AY, Varker CJ

Study of Minority Carrier Lifetime Behavior in Czochralski-Grown Silicon Crystals
Wong DC, Wakefield GF

Influence of Crystal Defects on the Generation Lifetime of Minority Carriers in Silicon
Eder A, Werner C

Influence of Impurity-Decorated Stacking Faults on the Transient Response of Metal Oxide Semiconductor Capacitors
Ichida Y, Yanada T, Kawado S

Control of Lifetime in Silicon by Implantation of Iron
Mamine T, Hayashi H, Matsushita T, Yanada T, Kumagai O, Nishiyama K, Kaneko K

Carrier Lifetime Measurements for Process Monitoring During Device Production
Graff K, Pieper H

Measurement and Retention of Recombination Lifetime
Blais PD, Seiler CF

Measurement of Minority Carrier Lifetime in Silicon Crystals by the Photoconductive Decay Technique
Gerhard AR, Pearce CW

Minority Carrier Lifetime Profile Measurements by Use of the Photocurrent Technique
Reichl H, Ruge I, Eichinger P, Müller JL

Radial Lifetime Profiling on Silicon Specimens by the Photoconductivity Decay and Photocurrent MethodsA Comparison
Vieweg-Gutberlet FG, Siegesleitner PF, Stallhofer M

Lifetime Depth Profile Measurement Method in Heavily Doped Semiconductors Using Electron Beams
Possin GE, Adler MS, Baliga BJ

A High Signal-to-Noise Oscillator for Contactless Measurement of Photoinduced Carrier Lifetimes
Curtis HW, Verkuil RL

A Contactless Method of Junction Leakage Testing and Comparison of Associated Data with Contact-Determined Leakage
Verkuil RL, Pak MS

Laser Scanning Technique for the Investigation of Power Devices
Engström O, Drugge B, Tove PA

Committee: F01
Paper ID: STP712-EB
DOI: 10.1520/STP712-EB

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0-8031-0390-5
978-0-8031-0390-0
STP712-EB