STP712

    Lifetime Factors in Silicon

    Westbrook RD
    Published: 1980


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    A comprehensive review published for the purpose of furthering standards development relating to carrier lifetime measurement, interpretation, and control.


    Table of Contents

    Introduction

    Minority Carrier Lifetime Characteristics in Semiconductor Silicon—An Overview

    Survey of Literature on Minority Carrier Lifetimes in Silicon and Related Topics

    Influence of Collector Recombination Lifetime on the Current Gain and Storage Time of High-Voltage Power Transitors

    Effects of Carrier Lifetime and End-Region Recombination on the Forward Current and Switching Behavior of Power Pin Diodes

    Dynamic Storage Time Measurements on Metal Oxide Semiconductor-Random Access Memory Circuits

    Minority Carrier Lifetime Degradation in Silicon Due to Thermally Generated Dislocations

    Study of Minority Carrier Lifetime Behavior in Czochralski-Grown Silicon Crystals

    Influence of Crystal Defects on the Generation Lifetime of Minority Carriers in Silicon

    Influence of Impurity-Decorated Stacking Faults on the Transient Response of Metal Oxide Semiconductor Capacitors

    Control of Lifetime in Silicon by Implantation of Iron

    Carrier Lifetime Measurements for Process Monitoring During Device Production

    Measurement and Retention of Recombination Lifetime

    Measurement of Minority Carrier Lifetime in Silicon Crystals by the Photoconductive Decay Technique

    Minority Carrier Lifetime Profile Measurements by Use of the Photocurrent Technique

    Radial Lifetime Profiling on Silicon Specimens by the Photoconductivity Decay and Photocurrent Methods—A Comparison

    Lifetime Depth Profile Measurement Method in Heavily Doped Semiconductors Using Electron Beams

    A High Signal-to-Noise Oscillator for Contactless Measurement of Photoinduced Carrier Lifetimes

    A Contactless Method of p-n Junction Leakage Testing and Comparison of Associated Data with Contact-Determined Leakage

    Laser Scanning Technique for the Investigation of Power Devices


    Committee: F01

    DOI: 10.1520/STP712-EB

    ISBN-EB: 978-0-8031-4780-5

    ISBN-13: 978-0-8031-0390-0

    ASTM International is a member of CrossRef.

    0-8031-0390-5
    978-0-8031-0390-0
    STP712-EB