Thirteen papers provide the latest concepts and metrology of the Gate Dielectric Integrity (GDI) and its applications for the material and device process and tool qualification. The wide variety of topics covered includes: concepts, methods, protocols and reliability, and assessment as related to dielectric integrity. The characterization of thin dielectrics, various GDI measurements techniques, and discussion of important effects on the characterization of GDI is also included. Until now, such information has never been available in a single book on GDI.
This publication will benefit process engineers, fab technologists, quality and reliability engineers, silicon material scientists, materials characterization analysts, research scholars and device engineers.
Voltage Step Stress for 10 nm Oxides
Localized Charging Damage in Thin Oxides
Bersuker G., Werking J.
COCOS (Corona Oxide Characterization of Semiconductor) Metrology: Physical Principles and Applications
D'Amico J., Jastrzebski L., Lagowski J., Savtchouk A., Wilson M.
Application of Quantox Measurements to Identify Phosphorus Contamination in Silicon Wafers
Dexter M., Fritz J., Hasslinger K., Ullo C.
Silicon Substrate Related Gate Oxide Integrity at Different Oxide Thicknesses
Grabmeier J., Grann E., Hölzl R., Huber A., Wahlich R.
Single-Wafer Gate Dielectric Technologies for Sub-0.18 μm Applications
Chen C., Jaggi A., Lopes D., Miner G., Sanchez E., Xing G., Yokota Y.
High Resolution Gate Oxide Integrity (GOI) Measurement in Near-Perfect Silicon
Itou W., Murakami Y., Shingyouji T., Yamazaki T.
Paper ID: STP1382-EB