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Digital Library /STP / STP1382-EB
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Description
Table of Contents
Ultra-Thin Film Dielectric Reliability Characterization
Suehle JS
Gate Oxide Reliability Assessment and Some Connections to Oxide Integrity
Dumin DJ
Voltage Step Stress for 10 nm Oxides
Strong A
Localized Charging Damage in Thin Oxides
Bersuker G, Werking J
Characterization of Gate Dielectrics with Mercury Gate MOS Current-Voltage Measurements
Gruber GA, Hillard RJ
COCOS (Corona Oxide Characterization of Semiconductor) Metrology: Physical Principles and Applications
Wilson M, Lagowski J, Savtchouk A, Jastrzebski L, D'Amico J
Application of Quantox Measurements to Identify Phosphorus Contamination in Silicon Wafers
Dexter MA, Hasslinger KM, Fritz JR, Ullo CA
Application of Gate Oxide Integrity Measurements in Silicon Wafer Manufacturing
Seacrist MR
Silicon Substrate Related Gate Oxide Integrity at Different Oxide Thicknesses
Grann ED, Huber A, Grabmeier J, Hölzl R, Wahlich R
Single-Wafer Gate Dielectric Technologies for Sub-0.18 m Applications
Miner G, Xing G, Yokota Y, Jaggi A, Sanchez E, Chen C, Lopes D
High Resolution Gate Oxide Integrity (GOI) Measurement in Near-Perfect Silicon
Murakami Y, Yamazaki T, Itou W, Shingyouji T
Qualification of Epi Layers and Interface Properties by an Improved -PCD Technique
Pavelka T
Committee: F01
Paper ID: STP1382-EB
DOI: 10.1520/STP1382-EB
 ASTM International is a member of CrossRef.
0-8031-2615-8
978-0-8031-2615-2
STP1382-EB
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