STP1340

    Recombination Lifetime Measurements in Silicon

    Gupta D, Backer FR, Hughes W
    Published: 1998


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    Presents state-of-the-art research on measurement interpretation, lifetime applications, measurement interferences and future directions for silicon and device processing. This unique volume features 30 comprehensive, peer-reviewed papers from an array of international experts in the field covering such topics as:

    • Lifetime Concepts

    • Photoconductivity Techniques

    • Elymat Techniques

    • Surface Photovoltaic Techniques

    • Comparisons Between Measuring Techniques

    • Applications of Lifetime Measurement in Silicon

    • Standardization and Industry Practices

    • Round Robin Testing Results.

    This is an invaluable publication for semiconductor process, equipment and reliability engineers, fab technologists, quality engineers and silicon material scientists, as well as material characterization analysts and device engineers.


    Table of Contents

    Overview

    Recombination Lifetimes in Silicon

    Minority Carrier Diffusion Length Degradation in Silicon: Who is the Culprit?

    Aspects of Silicon Contamination Control by Lifetime Measurements

    Carrier Lifetime Measurements by Microwave Photoconductivity Decay Method

    The Optical Excitation Effect in Transition Metal Doped CZ Silicon Wafers Revealed by the Microwave Photoconductive Decay Lifetime Measurement

    Contactless Frequency Resolved Photoconductance (FR-PC) Measurement of Iron Contaminated P-Type Silicon

    Lifetime Measured by Low Injection Level μ-PCD Technique

    Effects of Sample Inhomogeneity and Geometry on Photoconductivity Decay

    New Developments of the Elymat Technique

    Optimization and Control of Elymat Lifetime Measurement for Use in a Manufacturing Setting

    Present Status of the Surface Photovoltage Method (SPV) for Measuring Minority Carrier Diffusion Length and Related Parameters

    Non-Contact Measurements of the Minority Carrier Recombination Lifetime at the Silicon Surface

    Monitoring of Surface Minority Carrier Lifetime Using Modulated Photocurrent

    Non-Contact Silicon Epilayer and Subsurface Characterization with UV/mm Wave Technique

    Canalysis of Photoconductance Decay and Surface Photovoltage Techniques: Theoretical Perspective and Experimental Evidence

    Application and Comparison of SPV and μPCD for Iron Measurement in Silicon Wafer Manufacturing

    Problems and Possibilities of Comparing Different Lifetime Measuring Instruments and Techniques

    Metallic Contamination from Wafer Handling

    The Application of Minority Carrier Lifetime Techniques in Modern CZ Silicon

    Recombination Lifetime Variations and Defect Introduction by Rapid Thermal Processing

    Influence of Iron and Copper on Minority Carrier Recombination Lifetime in Silicon

    Characteristics and Evaluation Methods of Carrier Recombination Lifetimes in High-quality Silicon Wafers

    Silicon Lifetime Degradation as a Function of Wet Chemical Cleans and Chemical Purity

    Influence of Metal Impurities on Lifetime

    Oxygen Precipitation Characterization Using the Elymat Technique

    Application of Recombination Lifetime Measurements in Silicon Wafer Manufacturing

    Spatial Nonuniformities in the Minority-Carrier Diffusion Length/Lifetime: Measurement and Implications on a Large-Area Device Performance

    Measurement of Minority Carrier Recombination Lifetime in Silicon Wafers by Measurement of Photoconductivity Decay by Microwave Reflectance: Result of Round Robin Test

    Results of the Lifetime Round Robins Done in the Framework of the Semi M6 Solar Silicon Standardization Task Force

    Appendix I: Panel Discussions

    Author Index

    Subject Index


    Committee: F01

    DOI: 10.1520/STP1340-EB

    ISBN-EB: 978-0-8031-5389-9

    ISBN-13: 978-0-8031-2489-9

    ASTM International is a member of CrossRef.

    0-8031-2489-9
    978-0-8031-2489-9
    STP1340-EB