Published: Jan 1974
| ||Format||Pages||Price|| |
|PDF (508K)||13||$25||  ADD TO CART|
|Complete Source PDF (6.3M)||13||$86||  ADD TO CART|
In recent years, the interest in modeling of semiconductor processes and silicon device parameters has intensified considerably. Precise knowledge of the doping distribution in the semiconductor emerged as a key requirement for input and starting condition of many of these models and for their verification. It turned out that the spreading resistance technique, after careful probe calibration and multilayer data analysis, is able to supply some of the required data better than any other characterization technique available. This paper discusses these successful applications. On the other hand, this paper points out inherent limitations of the spreading resistance technique with regard to resolution and precision, and how this affects the verification of process and device models. Finally, the paper describes ways to supplement the spreading resistance technique by other material characterization or electrical techniques so that the combination of these methods is capable of generating the required experimental data for the analytical models.
arsenic, boron, design, device modeling, doping distribution, phosphorus, process control, process modeling, spreading resistance
Schroen, Walter H.
Texas Instruments Incorporated, Dallas, Texas
Paper ID: STP47412S