SEDL / STP / STP572-EB / STP47411S

The Experimental Investigation of Two-Point Spreading Resistance Correction Factors for Diffused Layers

Goldsmith, N.
RCA Laboratories Princeton, New Jersey

D'Aiello, R. V.
RCA Laboratories Princeton, New Jersey

Sunshine, R. A.
RCA Laboratories Princeton, New Jersey

Pages: 12    Published: Jan 1974

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Abstract

Spreading resistance measurements have been made on a series of erfc and Gaussian phosphorus diffusions into n and p-type silicon. Conventional four point probe methods were used to obtain values of sheet resistance and surface concentration. Comparison between the two methods shows increasingly large disagreements as the diffusion depth is decreased. The Dickey formula for accounting for the presence of a junction is shown to work well for uniform (non-diffused) samples but to fail to correct fully and properly for diffusions less than 20 µm deep. Empiric curves for estimating errors on lapped surfaces used in this study are given for a wide variety of samples.