STP572

    Effects of Oxygen and Gold on Silicon Power Devices

    Published: Jan 1974


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    Abstract

    Several important features that make the two-probes spreading resistance technique a unique process control tool for designing and manufacturing silicon power devices are elucidated in terms of the effects of electrically active oxygen and gold centers on the characteristics of transistors, thyristors, and rectifiers. The effectiveness of the spreading resistance technique is compared to other commonly practiced techniques for the investigation of diffusion mechanisms of oxygen in homotaxial NPN transistors and of gold in fast switching rectifiers and thyristors.

    Keywords:

    gold in silicon, oxygen in silicon


    Author Information:

    Assour, Jacques
    RCA Solid State Division Somerville, New Jersey,


    Paper ID: STP47408S

    Committee/Subcommittee: F01.15

    DOI: 10.1520/STP47408S


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