SEDL / STP / STP572-EB / STP47401S

Spreading Resistance Correction Factors for (111) and (100) Surfaces

Murrmann, H.
Siemens AG, Munich,

Sedlak, F.
Siemens AG, Munich,

Pages: 8    Published: Jan 1974

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Abstract

The effective contact radius for spreading resistance measurements on Si has been evaluated by comparision of S.R. for epitaxial layers limited by a pn-junction or by a well conducting buried layer for different crystal orientation. The contact radius on (100) surfaces showed to be greater by a factor of 1,26 than for a (111) plane. Furthermore measurements were made on samples for both (100) and (111) orientation in the resistivity range of 0,01 to 80 Ωcm with n and p-type doping. Data for spreading resistance and resulting from the predetermined contact radius for the resistivity dependent correction factor are given.