SYMPOSIA PAPER Published: 01 January 1974
STP47401S

Spreading Resistance Correction Factors for (111) and (100) Surfaces

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The effective contact radius for spreading resistance measurements on Si has been evaluated by comparision of S.R. for epitaxial layers limited by a pn-junction or by a well conducting buried layer for different crystal orientation. The contact radius on (100) surfaces showed to be greater by a factor of 1,26 than for a (111) plane. Furthermore measurements were made on samples for both (100) and (111) orientation in the resistivity range of 0,01 to 80 Ωcm with n and p-type doping. Data for spreading resistance and resulting from the predetermined contact radius for the resistivity dependent correction factor are given.

Author Information

Murrmann, H.
Sedlak, F.
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Details
Developed by Committee: F01
Pages: 137–144
DOI: 10.1520/STP47401S
ISBN-EB: 978-0-8031-6938-8
ISBN-13: 978-0-8031-6661-5