STP572

    Spreading Resistance Correction Factors for (111) and (100) Surfaces

    Published: Jan 1974


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    Abstract

    The effective contact radius for spreading resistance measurements on Si has been evaluated by comparision of S.R. for epitaxial layers limited by a pn-junction or by a well conducting buried layer for different crystal orientation. The contact radius on (100) surfaces showed to be greater by a factor of 1,26 than for a (111) plane. Furthermore measurements were made on samples for both (100) and (111) orientation in the resistivity range of 0,01 to 80 Ωcm with n and p-type doping. Data for spreading resistance and resulting from the predetermined contact radius for the resistivity dependent correction factor are given.

    Keywords:

    Contact radius, correction factors, silicon, spreading resistance, surface orientation


    Author Information:

    Murrmann, H.
    Siemens AG, Munich,

    Sedlak, F.
    Siemens AG, Munich,


    Paper ID: STP47401S

    Committee/Subcommittee: F01.15

    DOI: 10.1520/STP47401S


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