STP363

    Correlation of Proton, Neutron, Electron, and Photon Radiation Damage in Transistors and Diodes

    Published: Jan 1964


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    Abstract

    The correlation of proton, neutron, electron, and photon radiation damage effects in silicon semiconductor devices appears to be possible if sufficient care is taken in defining the various aspects of the radiation environment and material characteristics. Because the environments encountered in space are difficult to simulate in the laboratory, this correlation makes it possible to simplify appreciably the testing of components. This simplified testing is discussed as it applies to testing of semiconductor components.


    Author Information:

    Keister, G. L.
    Chief, The Boeing Co., Seattle, Wash.


    Paper ID: STP47061S

    Committee/Subcommittee: E10.02

    DOI: 10.1520/STP47061S


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