Published: Jan 1964
| ||Format||Pages||Price|| |
|PDF Version (432K)||16||$25||  ADD TO CART|
|Complete Source PDF (4.3M)||16||$55||  ADD TO CART|
Simulation of space proton effects on the operational performances of transistors and diodes is discussed. Emphasis is placed on resolving the natural proton environment, the basic radiation interactions, and the secondary environmental influences. Data concerning the proton space environment are briefly summarized. The effects of proton-induced ionization and displacement on the performance of transistors and diodes are discussed, as well as the influence of self-shielding and operating temperature. Techniques used in conducting accelerator bombardment and in monitoring transistor and diode parameters are discussed. Emphasis is placed on the importance of careful specimen selection and the influence of self-shielding. Methods of preparing an accelerator beam of protons for uniform specimen exposure and of obtaining accurate dosimetry of the dislocating flux are presented. Transistor and diode parameters to be monitored are selected on the basis of their sensitivity to a specific proton interaction. Selected data on damage thresholds, changes in current gain, and changes in carrier lifetime are presented in terms of the integrated flux exposure of 10-Mev protons. Transistors and diodes tested showed not only a linear dependence on integrated proton flux (for changes in the inverse of the forward current gain and of the carrier lifetime respectively) but also an important dependence on self-shielding.
Brown, R. R.
The Boeing Co., Seattle, Wash.
Paper ID: STP47059S