Published: Jan 1964
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A computer code has been developed that calculates the defect density induced in a semiconductor device by space protons striking a shield around the device. Results depend critically on low-energy spectral details of the incident protons. Defect densities in silicon as a function of shielding thickness are given for several typical spectra, normalized to allow multiplication by a suitable flux value.
Dye, D. L.
The Boeing Co., Seattle, Wash.
Paper ID: STP47056S