Published: Jan 1964
| ||Format||Pages||Price|| |
|PDF (164K)||7||$25||  ADD TO CART|
|Complete Source PDF (4.3M)||167||$55||  ADD TO CART|
A computer code has been developed that calculates the defect density induced in a semiconductor device by space protons striking a shield around the device. Results depend critically on low-energy spectral details of the incident protons. Defect densities in silicon as a function of shielding thickness are given for several typical spectra, normalized to allow multiplication by a suitable flux value.
Dye, D. L.
The Boeing Co., Seattle, Wash.