STP1490: TRIM Modeling of Displacement Damage in SiC for Monoenergetic Neutrons

    Khorsandi, B.
    Graduate Student, Ohio State University, Columbus, OH

    Blue, T. E.
    Professor, Ohio State University, Columbus, OH

    Windl, W.
    Professor, Ohio State University, Columbus, OH

    Kulisek, J.
    Graduate Student, Ohio State University, Columbus, OH

    Pages: 8    Published: Jan 2007


    Abstract

    Although silicon carbide is a very good semiconductor material for the fabrication of diode detectors for use as neutron power monitors in nuclear reactors, the electrical properties of the diodes may be altered because of interactions between energetic neutrons and SiC atoms. If the energy that is transferred from a neutron to an atom in a collision exceeds some threshold value, the atom will be moved from its original position, creating displacement damage. Accurately modeling displacement damage is a first step to finding ways to eliminate or decrease the amount of damage the displacements induce. The methodology that we have used to estimate the number of displacements per atom per fluence, using two codes ( and ) is presented in this paper, along with examples of the results of our calculations.

    Keywords:

    displacement damage, MCNP, TRIM, PKA


    Paper ID: STP45436S

    Committee/Subcommittee: E10.08

    DOI: 10.1520/STP45436S


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