STP1497

    Thermal Residual Stress Relaxation in Powder Metal IN100 Superalloy

    Published: Jan 2007


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    Abstract

    Relaxation of shot peen induced compressive residual stresses due to thermal exposure was measured using X-ray diffraction. The material used in this study was a hot isostatically pressed (HIP) powder metal (PM) IN100 nickel base superalloy. A total of 14 IN100 samples were shot peened to an Almen intensity of 6A using MI-170-R shot with 125 % coverage. The sample dimensions were nominally 16×13×4-mm thick with an irradiated X-ray region of 8×5 mm. Residual stress measurements were made at the surface and at nominal depths of 12, 25, 50, 75, 125, 175, 250, and 350 microns. The shot peened samples were thermal exposed at two temperatures (650, 704°C) and a range of exposure times (0.5–300 h). Residual stress measurements on shot peened samples without thermal exposure were used as a basis for comparison. The relaxation of shot peened compressive residual stresses under purely thermal loading was examined. The residual stresses exhibited an initial rapid decrease on the surface and in the depth at both temperatures. However, continued thermal exposure produced little or no change in surface residual stresses while peak compressive stresses in the depth continued to relax with time at both temperatures. In all cases of this study the retained peak compressive residual stress after thermal exposure was greater than 50 % of the baseline value.

    Keywords:

    residual stress, shot peen, thermal exposure, thermal relaxation, stress relaxation, IN100, superalloy, X-ray, cold work


    Author Information:

    Buchanan, Dennis J.
    University of Dayton Research Institute, Dayton, Ohio

    John, Reji
    Air Force Research Laboratory, Materials and Manufacturing Directorate, AFRL/MLLMN, Wright-Patterson Air Force Base, Ohio

    Ashbaugh, Noel E.
    University of Dayton Research Institute, Dayton, Ohio


    Paper ID: STP45325S

    Committee/Subcommittee: E08.06

    DOI: 10.1520/STP45325S


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