STP384

    Radiation Induced Surface Effects on Selected Semiconductor Devices

    Published: Jan 1965


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    Abstract

    A preliminary investigation into the effects of space indigenous radiation on a number of semiconductor devices is described. A Co60 source was used to irradiate the devices to an ionization level equivalent to that received by a satellite in a typical orbit in a six-month period. Transistor ICBO and diode IR were monitored throughout the irradiation and pre-test and post-test transistor gain measurements were made. The results of the irradiation test are presented in graphical and tabular form. In general, transistor and diode reverse current increased and transistor gain decreased during irradiation. Some recovery was evidenced following storage and temperature annealing cycles.

    Keywords:

    Co, 60, radiation, surface effects, semiconductor bulk damage, space radiation, transistors, diodes, zener diodes, field effect transistors, permanent damage, recovery, annealing, radiation effects, Nimbus


    Author Information:

    Cocca, U.
    Radio Guidance Operation, General Electric Co., Syracuse, N. Y.

    Koepp-Baker, N. B.
    Radiation Effects Operation, General Electric Co., Oklahoma City, Oklahoma


    Paper ID: STP44610S

    Committee/Subcommittee: E10.07

    DOI: 10.1520/STP44610S


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