Proton and Electron Permanent Damage in Silicon Semiconductor Devices

SEDL / STP / STP384-EB / STP44608S

Proton and Electron Permanent Damage in Silicon Semiconductor Devices

Brown, R. R.
Research Engineer, Nuclear and Space Physics organization, The Boeing Company, Seattle, Wash.

Pages: 21 Published: Jan 1965

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Abstract

Data are presented on permanent radiation damage in silicon diodes, p-on-n solar cells, and both n-p-n and p-n-p transistors. This information was accumulated from proton (2 and 10 Mev) and electron (2 and 5 Mev) irradiation tests. Selected transistors of the following constructions were tested; grown, diffused mesa, diffused planar, and epitaxial planar. Anomalous current gain degradation was observed for irradiated transistors operating at low currents. This damage has been shown to be the result of ionization-induced changes in surface recombination velocity. Transistor damage constants for displacement damage from proton and electron irradiation tests are compared with those found from neutron and gamma ray tests.

Keywords:
atomic displacements, beta cutoff frequency, common emitter current gain, damage constant, diffusion length, effective base width, effective surface lifetime, integrated flux, ionization-induced changes, minority-carrier lifetime, recombination centers, short-circuit current, surface recombination velocity

Paper ID: STP44608S
Committee/Subcommittee: E10.08
DOI: 10.1520/STP44608S

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