STP384

    Transient High Energy Effects in Semiconductors and Insulators

    Published: Jan 1965


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    Abstract

    This paper will be concerned with some physical effects that occur in typical semiconductor and insulating materials during and after exposure to a pulse of high energy ionizing radiation. These effects occur typically on a time scale of a few microseconds to milliseconds. These time dependences are found to be governed by the intensity-time history of the radiation pulse and by the relaxation time or times of the physical processes initiated by the pulse.


    Author Information:

    Honnold, V. R.
    Section Head, Hughes Aircraft Company, Fullerton, California

    Berggren, C. C.
    Member Technical Staff, Hughes Aircraft Company, Fullerton, California

    Emmert, R. R.
    Section Head, Hughes Aircraft Company, Fullerton, California

    Peffley, W. M.
    Member Technical Staff, Hughes Aircraft Company, Fullerton, California


    Paper ID: STP44604S

    Committee/Subcommittee: E10.07

    DOI: 10.1520/STP44604S


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