Digital Library / STP / STP384-EB / STP44604S

Transient High Energy Effects in Semiconductors and Insulators

Honnold, V. R.
Section Head,Hughes Aircraft Company,California,

Berggren, C. C.
Member Technical Staff,Hughes Aircraft Company,California,

Emmert, R. R.
Section Head,Hughes Aircraft Company,California,

Peffley, W. M.
Member Technical Staff,Hughes Aircraft Company,California,

Pages: 12    Published: Jan 1965

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Source: STP384-EB

Abstract

This paper will be concerned with some physical effects that occur in typical semiconductor and insulating materials during and after exposure to a pulse of high energy ionizing radiation. These effects occur typically on a time scale of a few microseconds to milliseconds. These time dependences are found to be governed by the intensity-time history of the radiation pulse and by the relaxation time or times of the physical processes initiated by the pulse.

Keywords:


Paper ID: STP44604S
Committee/Subcommittee: E10.07
DOI: 10.1520/STP44604S
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