SEDL / STP / STP342-EB / STP44498S

Modular Dopant for Silicon Czochralski Crystals

Smith, C. R.
Dow Corning Corp., Hemlock, Mich.

Currin, C. G.
Dow Corning Corp., Hemlock, Mich.

Pages: 9    Published: Jan 1963

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Abstract

The value of a modular concept for doping Czochralski crystals is dependent upon the consistency of the dopant modules. The modules are small fractionalgram crystals of silicon containing only a known number of dopant atoms. Uniformity of module size and resistivity determines the consistency of the modules. With present techniques of growing and cutting small-diameter crystals and measuring resistivity, doping modules may be prepared which normally vary less than 3 per cent in total number of dopant atoms. For a group of three silicon crystals, the uniformity of dopant modules permitted the crystals to be doped to a target resistivity of 50 ohm-cm within 5 per cent.