STP342

    Modular Dopant for Silicon Czochralski Crystals

    Published: Jan 1963


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    Abstract

    The value of a modular concept for doping Czochralski crystals is dependent upon the consistency of the dopant modules. The modules are small fractionalgram crystals of silicon containing only a known number of dopant atoms. Uniformity of module size and resistivity determines the consistency of the modules. With present techniques of growing and cutting small-diameter crystals and measuring resistivity, doping modules may be prepared which normally vary less than 3 per cent in total number of dopant atoms. For a group of three silicon crystals, the uniformity of dopant modules permitted the crystals to be doped to a target resistivity of 50 ohm-cm within 5 per cent.


    Author Information:

    Smith, C. R.
    Dow Corning Corp., Hemlock, Mich.

    Currin, C. G.
    Dow Corning Corp., Hemlock, Mich.


    Paper ID: STP44498S

    Committee/Subcommittee: F01.06

    DOI: 10.1520/STP44498S


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