STP342: Both Reversible and Permanent Effects of Moisture After Stress on Electrical Characteristics of Germanium Transistors

    Partridge, J.
    Instrumentation Laboratory, Massachusetts Inst. of Technology, Cambridge, Mass.

    Borofsky, A. J.
    Autonetics, Computer and Data SystemsSylvania Electric Products, Inc., AnaheimWoburn, Calif.Mass.

    Pages: 22    Published: Jan 1963


    Abstract

    Many changes of surface-dependent transistor parameters which occur after temperature and voltage stress are due to change of the amount of moisture on the junction. Generally voltage and temperature produce opposing effects when surface dependent parameters (SDP)3 changes are due solely to migration of moisture. The time constants associated with return to equilibrium after stress vary from minutes to months, and this variation depends on the amount of moisture present in the surrounding ambient, the magnitude and time of application of stress, and the amount of moisture present on the junction. The differences and similarities between germanium n-p-n and p-n-p alloy and mesa transistors are considered. The dependence of these effects on the surface potential produced by processing is discussed, since some moisture effects are not present when equal amounts of moisture are present on the junction. The relation of amounts of moisture present in the ambient to stability after operating and storage life testing is shown.


    Paper ID: STP44493S

    Committee/Subcommittee: F01.06

    DOI: 10.1520/STP44493S


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