Published: Jan 1961
| ||Format||Pages||Price|| |
|PDF ()||11||$25||  ADD TO CART|
|Complete Source PDF (6.5M)||11||$81||  ADD TO CART|
Changes in the ICBO, Iebo and hFE reliability of germanium alloy transistors (npn and pnp computer types) as a result of etching, washing, and encapsulation processing have been investigated beyond 2500 hr. Data following operation at maximum rated power and 100 C storage data are presented for hydrogen peroxide and modified hydrogen peroxide etching solutions; for tank and turbulent washing; and for five types of fluid-base and three types of dry encapsulants.
Borofsky, Arnold J.
Section Head, Reliability Engineering and Analysis, Sylvania Electric Products, Inc., Woburn, Mass.