STP300

    Beryllium Oxide Dielectric Heat Sinks for Electronic Devices

    Published: Jan 1961


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    Abstract

    Beryllium oxide is unique among precision ceramic products in that it has a high electrical resistivity and low dielectric loss combined with a thermal conductivity equal to that of aluminum. Because of this advantageous combination of properties, it has found increased use as a dielectric heat sink which can insulate electronic devices electrically, and at the same time remove substantial quantities of heat from them to a chassis heat sink.

    High-purity beryllia insulators are produced by ceramic fabrication techniques such as cold-pressing, slip-casting, and extrusion, followed by sintering at temperatures above 1500 C. By the application of precision fabricating techniques, close dimensional tolerances and high surface smoothness can be obtained for maximum compatibility with metal components.

    The application of a 0.030 in. beryllia dielectric heat sink beneath a power transistor has, for example, reduced the thermal resistance by a factor of 10 from that obtained when using a thin mica or anodized aluminum insulator. Tests conducted to date have indicated a potential increase of device power operating levels with little or no corresponding increase in junction temperature, or an increased life and reliability for the device by conductive cooling with beryllia.


    Author Information:

    Hessinger, P.
    National Beryllia Corp., Haskell, N. J.

    Strott, A.
    National Beryllia Corp., Haskell, N. J.

    Haura, B.
    National Beryllia Corp., Haskell, N. J.


    Paper ID: STP41235S

    Committee/Subcommittee: F01.10

    DOI: 10.1520/STP41235S


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