STP689: Laser-Induced Damage in Semiconductors

    Danileiko, YK
    Lebedev Physical Institute, Moscow,

    Manenkov, AA
    Lebedev Physical Institute, Moscow,

    Sidorin, AV
    Lebedev Physical Institute, Moscow,

    Pages: 4    Published: Jan 1979


    The laser-induced bulk breakdown in Ge, Si and GaAs crystals at the 10.6 µm, 2.76 µm, and 2.94 µm radiation wavelengths of the pulsed CO2, Ca2F:Er3+ and YAG:Er3+ lasers is investigated. Generation of free carriers has been observed and their kinetics studied by the dc and microwave photoconductivity measurement techniques. In Si and GaAs, the laser-induced bulk damage has been observed and the damage threshold measured. In Ge, the damage was not observed due to a self-defocusing effect associated with the negative contribution of nonequilibrium electrons in the refractive index. Mechanisms of free carrier generation and laser-induced damage are discussed.


    Laser induced breakdown, laser-induced damage threshold, nonequilibrium carriers, semiconductors, Ge, Si, GaAs

    Paper ID: STP39131S

    Committee/Subcommittee: F01.02

    DOI: 10.1520/STP39131S

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